PNP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1268 █ LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………-120V VCEO——Collector-Emitter Voltage……………………………-120V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max -120 Unit Test Conditions V IC=-1mA, IB=0 ICBO Collector Cut-off Current -100 nA VCB=-120V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 HFE DC Current Gain VCE(sat) VBE fT Cob 200 VCE=-6V, IC=-2mA 700 Collector- Emitter Saturation Voltage V IC=-10mA, IB=-1mA -0.65 V IC=-6A, IB=-2mA Current Gain-Bandwidth Product 100 MHz Output Capacitance 4.0 pF Base-Emitter Voltage -0.3 6 NF Noise Figure 2 3 █ hFE Classification GR BL 200—400 350—700 dB VCE=-6V, IC=-1mA VCB=-10V, IE=0，f=1MHz VCE=-6V, IC=-100μA， f=10Hz，Rg=10KΩ VCE=-6V, IC=-100μA， f=1Hz，Rg=10KΩ VCE=-6V, IC=-100μA， f=1Hz，Rg=100KΩ