HUASHAN H1740

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H1740
█ APPLICATIONS
Medium Seed switching
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………300mW
1―Emitter,E
2―Collector,C
3― Base,B
VCBO ——Collector-Base Voltage………………………………50V
VCEO ——Collector-Emitter Voltage……………………………40V
VE B O ——Emitter -Base Voltage………………………………5V
I C ——Collector Current …………………………………… 100mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions ICBO
Collector Cut-off Current
500 nA VCB=30V, IE=0
IEBO
Emitter Cut-off Current
500 nA VEB=4V, IC=0
HFE DC Current Gain 120 820 VCE=1V, IC=1mA 0.4 V IC=50mA, IB=5mA VCE(sat) Collector- Emitter Saturation Voltage BVCBO
Collector-Base Breakdown Voltage
50 V IC=50μA,
BVCEO
BVEBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
40 5 V V IC=1mA, IB=0 IE=50μA,IC=0
Current Gain-Bandwidth Product
180 Output Capacitance
1.2 fT
Cob
MHz VCE=12V, IC=2mA
pF VCB=6V, IE=0,f=1MHz
█ hFE Classification
Q
120—270 R
S
IE=0
E
180—390 270—560 390—820