NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2274 █ APPLICATIONS Low frequency power amplifier Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………600mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………60V VCEO——Collector-Emitter Voltage……………………………50V V EB O ——Emitter-Base Voltage………………………………5V IC——Collector Current………………………………………500mA ICP——Collector Current（Pulse）………………………………800mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 60 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=1mA, BVEBO Emitter-Base Breakdown Voltage 5 V IE=10μA，IC=0 IB=0 ICBO Collector Cut-off Current 1.0 μA VCB=40V, IE=0 IEBO Emitter Cut-off Current 1.0 μA VEB=4V, IC=0 HFE(1) DC Current Gain 60 HFE(2) VCE=5V, IC=50mA 320 VCE=5V, IC=400mA 35 VCE(sat) Collector- Emitter Saturation Voltage 0.2 0.6 V IC=400mA, IB=40mA VBE(sat) Base-Emitter Saturation Voltage 0.9 1.2 V IC=400mA, IB=40mA Current Gain-Bandwidth Product 120 5 fT Cob Output Capacitance MHz pF █ hFE Classification D E F 60—120 120—200 160—320 VCE=10V, IC=10mA VCB=10V, f=1MHz