NP N S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2655S █ APPLICATIONS power amplifier Applications, power Switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………50V V EB O ——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………………2A Ib——Base Current………………………………………………-0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 50 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=10mA, BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 IB=0 ICBO Collector Cut-off Current 1.0 μA VCB=50V, IE=0 IEBO Emitter Cut-off Current 1.0 μA VEB=5V, IC=0 HFE(1) DC Current Gain 70 HFE(2) VCE=2V, IC=0.5A 240 VCE=2V, IC=1.5A 40 VCE(sat) Collector- Emitter Saturation Voltage 0.5 V IC=1A, IB=50mA VBE(sat) Base-Emitter Saturation Voltage 1.2 V IC=1A, IB=50mA MHz pF μS μS μS VCE=2V, IC=0.5A fT Cob tON tSTG tF Current Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time 100 30 0.1 1.0 0.1 █ hFE Classification O Y 70—140 120—240 VCB=10V, IE=0，f=1MHz See specified test circuit NP N S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2655S NP N S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2655S