PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2907A █ APPLICATIONS GENERAL PURPOSE APPLICATION. SWITCHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO ——Collector-Base Voltage………………………………-60V 1―Emitter，E 2―Base，B 3―Collector，C VCEO——Collector-Emitter Voltage……………………………-60V VE B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-600mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage －６０ Ｖ IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage －６０ Ｖ IC=-10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage －５ Ｖ －１０ HFE(1) DC Current Gain ７５ VCE=-10V, IC=-0.1mA HFE(2) １００ ３００ VCE=-10V, IC=-150mA HFE(3) ５０ VCE=-10V, IC=-500mA VCE(sat1) Collector- Emitter Saturation Voltage －０．４ Ｖ IC=-150mA, IB=-15mA VCE(sat2) －１．６ Ｖ IC=-500mA, IB=-50mA VBE(sat1) Base-Emitter Saturation Voltage －１．３ Ｖ IC=-150mA, IB=-15mA VBE(sat2) －２．６ Ｖ IC=-500mA, IB=-50mA ２００ ８ ICBO Collector Cut-off Current fT Cob Current Gain-Bandwidth Product tON Turn-On Time Delay Time Rise Time tOFF Turn-Off Time tSTG tF Storage Time tD tR Output Capacitance Fall Time IE=-10μA，IC=0 ｎＡ VCB=-50V, IE=0 ＭＨｚ VCE=-20V,IC=-50mA，f=100ＭＨｚ ｐＦ VCB=-10V, IE=0，f=1ＭＨｚ Vcc=-30V ４５ ｎＳ Ic=-150mA １０ ｎＳ IB1=-15mA ４０ ｎＳ Vcc=-6V １００ ｎＳ Ic=-150mA ８０ ｎＳ IB1=IB2=-15mA ３０ ｎＳ