NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H3203 █ APPLICATIONS HIGH CURRENT APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………35V VCEO ——Collector-Emitter Voltage……………………………30V VE B O ——Emitter -Base Voltage………………………………5V I C ——Collector Current …………………………………… 800mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ３５ Ｖ BVCEO Collector-Emitter Breakdown Voltage ３０ Ｖ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ HFE（1） DC Current Gain １００ ３２０ IE=1mA，IC=0 VCE=1V, IC=100mA HFE（2） DC Current Gain ３５ VCE=1V, IC=700mA ０．５ Ｖ IC=500mA, IB=20mA VCE=1V, IC=10mA VCE(sat) Collector- Emitter Saturation Voltage IC=100μA, IE=0 IC=10mA, IB=0 VBE Base-Emitter Voltage ０５ ０．８ Ｖ ICBO Collector Cut-off Current １００ IEBO Emitter Cut-off Current fT Cob Current Gain-Bandwidth Product １２０ １３ ｎＡ VCB=35V, IE=0 ｎＡ VEB=5V, IC=0 Output Capacitance １００ ＭＨｚ VCE=5V, IC=10mA ｐＦ VCB=10V, IE=0，f=1ＭＨｚ █ HFE Classification O １００—２００ Y １６０—３２０