P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 █ SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Collector，C 2―Base，B 3―Emitter，E VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-45V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-500mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Typ Unit Test Conditions -50 V IC=-100μA, IE=0 Collector-Emitter Breakdown Voltage -45 V IC=-10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-100μA，IC=0 ICBO Collector Cut-off Current -100 nA VCB=-20V, IE=0 IEBO Emitter-Base Cut-off Current -10 μA VEB=-5V, IC=0 HFE（1） DC Current Gain 100 Max 600 VCE=-1V, IC=-100mA 40 HFE（2） VCE=-1V, IC=-500mA VCE(sat) Collector- Emitter Saturation Voltage -0.7 V IC=-500mA, IB=-50mA VBE(ON) Base-Emitter On Voltage -1.2 V VCE=-1V, IC=-500mA fT Current Gain-Bandwidth Product 100 MHz Ccbo Collector-Base Capacitance 8 pF █ hFE Classification 16 25 40 100—250 160—400 250—600 VCE=-5V, IC=-10mA VCB=-10V, IE=0 F=1MHz P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327