NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945 █ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………250mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………60V VCEO——Collector-Emitter Voltage……………………………50V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………150mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100μA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 DC Current Gain 90 HFE 600 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Cob Current Gain-Bandwidth Product NF Output Capacitance 250 3.0 MHz pF Noise Figure 4.0 dB VCE=6V, IC=10mA VCB=6V, IE=0，f=1MHz VCE=6V,IC=0.5mA，f=1KHz， Rs=500Ω █ hFE Classification R Q P 90—180 135—270 200—400 K 300—600 NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945