PNP DIGITAL TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HA114Y █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V VE B O ——Emitter-Base Voltage………………………………-6V IC——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage －５０ Ｖ IC=-10μA, BVCEO Collector-Emitter Breakdown Voltage －５０ Ｖ IC=-1mA, IE=0 IB=0 ICBO Collector Cut-off Current －０．１ ICEO Collector Cut-off Current －０．５ μＡ VCB=-40V, IE=0 μＡ VCE=-40V, IB=0 IEBO Emitter Cut-off Current －６７ －８８ －１２５ μＡ VEB=-5V, IC=0 HFE DC Current Gain ３０ VCE=-5V, IC=-5mA －０．１ －０．３ Ｖ IC=-10mA, IB=-0.5mA ＶＩ（ｏｆｆ） Ｉｎｐｕｔ Ｏｆｆ Ｖｏｌｔａｇｅ －０．５ －０．７ －０．９ Ｖ VCE=-5V, IC=-0.1mA ＶＩ（ｏｎ） R1 Ｉｎｐｕｔ Ｏｎ Ｖｏｌｔａｇｅ Ｉｎｐｕｔ Ｒｅｓｉｓｔｏｒ －１．０ －２．０ －４．０ Ｖ VCE=-0.2V, IC=-10mA ７．０ １０ １３ Ｋｏｈｍ Ｒｅｓｉｓｔｏｒ Ｒａｔｉｏ ０．１９３ ０．２１３ ０．２３４ VCE(sat) Collector- Emitter Saturation Voltage R1/ R2 fT Cob Current Gain-Bandwidth Product Output Capacitance ２５０ ５．５ ＭＨｚ VCE=-10V, IC=-5mA ｐＦ VCB=-10V, f=1ＭＨｚ Shantou Huashan Electronic Devices Co.,Ltd. HA114Y