N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………500V VCEO——Collector-Emitter Voltage……………………………400V V EB O ——Emitter-Base Voltage………………………………6V I C ——Collector Current……………………………………300mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Typ Max Unit Test Conditions 500 V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage 400 V IC=1mA, IB =0 BVEBO Emitter-Base Breakdown Voltage 6 V IE=100μA，IC=0 ICBO Collector Cut-off Current 100 nA VCB=400V, IE=0 IEBO Emitter-Base Cut-off Current 100 nA VEB=4V, IC=0 ICES Collector Cut-off Current 500 nA VCE=-400V, VBE=0 HFE（1） DC Current Gain 40 VCE=10V, IC=1mA HFE（2） 60 300 HFE（3） 45 VCE=10V, IC=50mA HFE（4） 40 VCE=10V, IC=100mA VCE=10V, IC=10mA 0.4 V IC=1mA, IB=0.1mA VCE(sat2) 0.5 V IC=10mA, IB=1mA VCE(sat3) 0.75 V IC=50mA, IB=5mA 0.75 V IC=10mA, IB=1mA pF VCB=20V, IE=0，F=1MHz VCE(sat1) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage Cob Output Capacitance 7