HUASHAN HB857

PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HB857
█　APPLICATIONS　LOW FREQUENCY POWER AMPLIFIER
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220
T stg ——Storage Temperature………………………… －55~150℃
T j ——Junction Temperature……………………………… 150℃　PC——Collector Dissipation（T c=25℃）…………………… 40W
VCBO ——Collector-Base Voltage……………………………-70V
1―Base，B
VCEO——Collector-Emitter Voltage………………………… -50V
2―Collector，C
3―Emitter, E
VEBO ——Emitter-Base Voltage……………………………… -5V
IC——Collector Current（DC）……………………………… -4A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　Typ　－７０　－５０　－５　HFE（1）　DC Current Gain　６０　HFE（2）　DC Current Gain　３５　VCE(sat)　Collector- Emitter Saturation Voltage　VBE(on)　Base-Emitter On Voltage　BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
ft
Current Gain-Bandwidth Product
Max　Unit Test Conditions Ｖ　Ｖ　Ｖ　IC=-10μA, IE=0
IC=-50mA, IB=0　IE=-10μA，IC=0
－１　μＡ　VCB=-50V, IE=0
３２０　VCE=-4V, IC=-1A　VCE=-4V, IC=-0.1A　－１　Ｖ　１５　－１　IC=-2A, IB=-0.2A　Ｖ　VCE=-4V, IC=-1A　ＭＨｚ　VCE=-4V, IC=-0.5A,
█ hFE Classification
B
C
６０—１２０　１００—２００　D
１６０—３２０