NPN SILICON Shantou Huashan Electronic Devices Co.,Ltd. TRANSISTOR HBD681 █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126F Tstg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCBO ——Collector-Base Voltage…………………………… 100V VCEO ——Collector-Emitter Voltage………………………… 100V 1―Emitter, E 2―Collector，C 3―Base，B VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 6A IC——Collector Current（DC）…………………………………… 4A IB——Base Current……………………………………………100mA █ 电参数（ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter Cut-off Current ICES *HFE Min Collector Cut-off Current DC Current Gain Typ Max Unit Test Conditions 200 μA VCB=100V, IE=0 2 mA VEB=5V, IC=0 500 μA VCE=100V, VEB=0 VCE=3V, IC=1.5mA 750 *VCE(sat) Collector- Emitter Saturation Voltage 2.5 V IC=1.5A, IB=30mA VBE(on) Base-Emitter On Voltage 2.5 V VCE=3V, IC=1.5A VCEO(SUS) Collector-Emitter Sustaining Voltage 100 * Pulse Test:PW=300µS,Duty Cycie=1.5% Pulsed IC=50mA, IB=0 Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBD681