HUASHAN HBTA12A60

Shantou Huashan Electronic Devices Co.,Ltd.
HBTA12A60
ＩＮＮＥＲ　ＩＮＳＵＬＡＴＥＤ　ＴＹＰＥ　ＴＲＩＡＣ　（ＩＩ　ＴＯ－２２０　ＰＡＣＫＡＧＥ）　█　Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=12A)
* High Commutation dv/dt █　General Description
The Triac HBTA8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
█ Absolute Maximum Ratings（Ta=25℃）　T stg ——Storage Temperature……………………………………………………………… －40~125℃
T j ——Operating Junction Temperature …………………………………………………… －40~125℃　PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT（RMS）——R.M.S On-State Current（Ta=79℃）………………………………………………… 12A
VG M ——Peak Gate Voltage ………………………………………………………………… 10V
I G M— — P e a k G a t e C u r r e n t … … … … … … … … … … … … … … … … … … … … … … … 2 . 0 A
ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………………… 119/130A
V ——RMS Isolation Breakdown Voltage……………………………………………………… 2500V
ISO
█ Electrical Characteristics （Ta=25℃）
Symbol
Items
Min.
Max.
Unit
Conditions
IDRM
Repetitive Peak Off-State Current
2.0
mA
VTM
Peak On-State Voltage
1.4
V
VD=VDRM, Single Phase,Half
Wave, TJ=125℃　IT=12A, Inst. Measurement
I+GT1
Gate Trigger Current（Ⅰ）
30
mA
VD =6V, RL =10 ohm
I- GT1
Gate Trigger Current（Ⅱ）
30
mA
VD =6V, RL =10 ohm
I-GT3
Gate Trigger Current（Ⅲ）
30
mA
VD =6V, RL =10 ohm
V+ GT1
Gate Trigger Voltage（Ⅰ）
1.5
V
VD =6V, RL =10 ohm
V- GT1
Gate Trigger Voltage（Ⅱ）
1.5
V
VD =6V, RL =10 ohm
V- GT3
Gate Trigger Voltage（Ⅲ）
1.5
V
VD =6V, RL =10 ohm
VGD
0.2
V
10
V/µS
Rth(j-c)
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
T J=125℃,VD =1/2VDRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-4.0A/ms　Junction to case
IH
Holding Current
(dv/dt)c
3.3
20
℃/W
mA
Shantou Huashan Electronic Devices Co.,Ltd.
█　Performance Curves
HBTA12A60
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA12A60