NPN DIGITAL T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC114E █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………50V VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage……………………………… 10V IC——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ５０ Ｖ IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ IC=0.1mA, IB=0 ICBO Collector Cut-off Current ０．１ ICEO Collector Cut-off Current ０．５ μＡ VCB=40V, IE=0 μＡ VCE=40V, IB=0 IEBO Emitter Cut-off Current １９５ ２５０ ３６０ μＡ VEB=5V, IC=0 HFE DC Current Gain ３０ VCE=5V, IC=5mA ０．１ ０．３ Ｖ IC=10mA, IB=0.5mA ＶＩ（ｏｆｆ） Ｉｎｐｕｔ Ｏｆｆ Ｖｏｌｔａｇｅ ０．８ １．１ １．５ Ｖ VCE=5V, IC=0.1mA ＶＩ（ｏｎ） R1 Ｉｎｐｕｔ Ｏｎ Ｖｏｌｔａｇｅ Ｉｎｐｕｔ Ｒｅｓｉｓｔｏｒ １．０ ７．０ ２．０ １０ ４．０ Ｖ VCE=0.2V, IC=10mA １３ Ｋｏｈｍ Ｒｅｓｉｓｔｏｒ Ｒａｔｉｏ ０．８ １．０ １．２ ２５０ VCE(sat) R2/R1 fT Collector- Emitter Saturation Voltage Current Gain-Bandwidth Product ＭＨｚ VCE=-10V, IC=-5mA Shantou Huashan Electronic Devices Co.,Ltd. HC114E