NPN DIGITAL T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC114T █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92S T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW VCBO ——Collector-Base Voltage………………………………50V 1―Emitter，E 2―Collector,C 3―Base，B VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage………………………………5V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ５０ Ｖ BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ ICBO Collector Cut-off Current ０．１ IEBO Emitter Cut-off Current ０．１ HFE DC Current Gain １００ ６００ VCE=5V, IC=1mA ０．３ Ｖ IC=10mA, IB=1mA ０．４ ０．５５ ０．８ Ｖ VCE=5V, IC=0.1mA ０．７ １．２ ３．０ Ｖ VCE=0.2V, IC=10mA ７．０ １０ １３ VCE(sat) Collector- Emitter Saturation Voltage ＶＩ（ｏｆｆ） Input Off Voltage ＶＩ（ｏｎ） Input On Voltage R1 Input Resistor fT Current Gain-Bandwidth Product ２５０ Output Capacitance ３．７ Cob IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA，IC=0 μA VCB=50V, IE=0 μA VEB=4V, IC=0 ＫΩ ＭＨｚ VCE=10V,IC=5mA ｐＦ VCB=10V,f=1ＭＨｚ