NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC1417 █ APPLICATIONS High Frequency Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………20V VCEO ——Collector-Emitter Voltage……………………………15V VE B O ——Emitter -Base Voltage………………………………3V I C ——Collector Current …………………………………… 30mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ２０ Ｖ ＩＣ＝１００μＡ，ＩＥ＝０ BVCEO Collector-Emitter Breakdown Voltage １５ Ｖ ＩＣ＝１ｍＡ，ＩＢ＝０ ３ Ｖ ＩＥ＝１００μＡ，ＩＣ＝０ BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current ０．１ μＡ ＶＣＢ＝１０Ｖ， ＩＥ＝０ IEBO Emitter Cut-off Current ０．１ μＡ ＶＥＢ＝３Ｖ， ＩＣ＝０ HFE DC Current Gain ５４ １４６ ＶＣＥ＝６Ｖ， ＩＣ＝１ｍＡ VCE(sat) Collector- Emitter Saturation Voltage ０．５ Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝１ｍＡ VBE(sat) Base-Emitter Saturation Voltage １．４２ Ｖ ＩＣ＝１０ｍＡ， ＩＢ＝１ｍＡ １００ ３００ ＭＨｚ ＶＣＥ＝１０Ｖ， ＩＣ＝５０ｍＡ １．４ ５．５ ｐＦ ｄＢ fT Cob NF Current Gain-Bandwidth Product Output Capacitance Noise Figure ＶＣＢ＝１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ ＶＣＥ＝６Ｖ，ＩＣ＝１ｍＡ，ＲＧ＝５０O █ hFE Classification F G H ５４—８０ ７２－－１０８ ９７－－１４６