HC8550 Shantou Huashan Electronic Devices Co.,Ltd. █ PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92 T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………-40V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………………-25V V EBO ——Emitter-Base Voltage………………………………-6V I C ——Collector Current………………………………………-1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO IEBO HFE Collector Cut-off Current VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO Base- Emitter Voltage fT Current Gain-Bandwidth Product Min Emitter Cut-off Current 85 40 DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage -40 -25 -6 100 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Typ Max Unit -0.1 -0.1 500 μA μA -1 -0.5 -1.2 V V V V V V MHz Test Conditions VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100μA，IE=0 IC=-2mA，IB=0 IE=-100μA，IC=0 VCE=-10V, IC=-50mA █ hFE Classification B 85—160 C D E 120—200 160—300 270—500 Shantou Huashan Electronic Devices Co.,Ltd. HC8550