NPN S I L I C O N T R A N S I S T O R HEP31 Series Shantou Huashan Electronic Devices Co.,Ltd. （HEP31/HEP31A/HEP31B/HEP31C） █ APPLICATIONS Mediuｍ Power Linear switching Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………40W PC——Collector Dissipation（Ta=25℃）……………………………2W VC BO ——Collector-Base Voltage、VCEO——Collector-Emitter Voltage HEP31………………………………40V HEP31A……………………………60V HEP31B……………………………80V HEP31C…………………………100V VE B O —— Emitter - Base Voltage………………………………5 V IC——Collector Current（DC）………………………………………3A IC——Collector Current（Pulse）……………………………………5A Ib——Base Current ………………………………………………1A 1―Base，B 2―Collector，C 3―Emitter，E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit HEP31 ４０ HEP31A ６０ HEP31B ８０ HEP31C １００ ICEO Collector Cut-off Current HEP31/ HEP31A HEP31B/ HEP31C ICES Collector Cut-off Current HEP31 HEP31A HEP31B HEP31C HFE（1） *DC Current Gain ２５ HFE（2） １０ VCE(sat) *Collector- Emitter Saturation Voltage VBE(ON) *Base-Emitter On Voltage IEBO Emitter Cut-off Current ０．３ ０．３ ２００ ２００ ２００ ２００ ５０ １．２ １．８ １ ３．０ BVCEO fT Collector-Emitter Breakdown Voltage Current Gain-Bandwidth Product *Pulse Test：PW≤300μｓ，Ｄｕｔｙ ｃｙｃｌｅ≤2% Ｖ Ｖ Ｖ Ｖ ｍＡ ｍＡ μＡ μＡ μＡ μＡ Ｖ Ｖ ｍＡ ＭＨｚ Test Conditions IC=30mA, IB=0 VCB=30V, IB=0 VCB=60V, IB=0 VCE=40V, VEB=0 VCE=60V, VEB=0 VCE=80V, VEB=0 VCE=100V, VEB=0 VCE=4V, IC=1A VCE=4V, IC=3A IC=3A, IB =375mA VCE=4V, IC=3A VEB=5V, IC=0 VCE=10V, IC=500mA ，ｆ＝１ＭＨｚ NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP31 Series （HEP31/HEP31A/HEP31B/HEP31C）