NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP41C █ APPLICATIONS Medium Power Linear Switching Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220AB T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（T c=25℃）…………………………65W PC——Collector Dissipation（T A =25℃）………………………… 2W 1―Base，B 2―Collector，C 3― Emitter，E VCBO ——Collector-Base Voltage………………………………100V VCEO——Collector-Emitter Voltage……………………………100V VE B O ——Emitter -Base Voltage………………………………5V IC——Collector Current……………………………………………6A I B ——Base Current……………………………………………2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit １００ Ｖ Test Conditions IC=30mA, IB=0 ICEO Collector Cut-off Current ０．７ IEBO Emitter Cut-off Current １ ICES Collector Cut-off Current HFE（1） DC Current Gain ３０ HFE（2） DC Current Gain １５ ７５ VCE=4V, IC=０．３A VCE=4V, IC=3A １．５ Ｖ IC=6A, IB =600mA ３．０ ２．０ Ｖ VCE=4V, IC=6A ＭＨｚ VCE=10V, IC=500mA, f=1ＭＨｚ VCE(sat) Collector- Emitter Saturation Voltage VBE(on) fT Base-Emitter On Voltage Current Gain-Bandwidth Product ｍＡ VCE=60V, IB=0 ｍＡ VEB=5V, IC=0 ４００ μＡ VCE=100V, VEB=0 Shantou Huashan Electronic Devices Co.,Ltd. HEP41C