N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~175℃ 1―G T j ——Operating Junction Temperature …………………………150℃ 2―D PD —— Allowable Power Dissipation（T c=25℃）………………131W 3―S VDSS —— Drain-Source Voltage ……………………………… 60V VGSS —— Gate-Source Voltage …………………………………±20V ID —— Drain Current（T c=25℃）……………………………………45A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Min Typ Max Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ６０ １ Gate –Source Leakage Current Gate Threshold Voltage ２．０ *Static Drain-Source On-Resistance ０．０２８ Input Capacitance Output Capacitance ２０５０ VGS=10V, ID =45A pF ６００ pF VDS =25V, VGS=0,f=1ＭＨｚ Crss tON Reverse Transfer Capacitance ２００ pF Turn-On Time １２０ nS td(on) Turn - On Delay Time １２ nS Rise Time ７４ nS Turn - Off Delay Time ３７ nS Fall Time １６ nS tOFF Turn Off Time ８０ nS Qg Total Gate Charge １２５ １５０ nC ＶＧＳ＝２０Ｖ VDS =48V，ＩＤ＝４５Ａ Gate Charge at 10V ６７ ８０ nC ＶＧＳ＝１０Ｖ ＲＬ＝1.07Ω Threshold Gate Charge ３．７ ４．５ １．５ nC ＶＧＳ＝２Ｖ Ｉｇ（ＲＥＦ）＝１．５ｍＡ ISD =45A BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss tr td(off) tf Qg(10) Qgd Characteristics VSD Diode Forward Voltage Rth Thermal Resistance， （j-c） Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% Unit Test Conditions V ID=250μA ,VGS=0V μＡ VDS = 60V，VGS=0 ±１００ ｎＡ VGS=±20V , VDS =0V ４．０ V VDS = VGS , ID =250μA ? Ｖ １．１４ ℃／Ｗ VDD =30V, ID =45A RL=0.667Ω, VGS=10V RG= 3.6 Ω Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06