N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………-55~175℃ Tj ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation（Tc=25℃）…………………173W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 80V VGSS —— Gate-Source Voltage ………………………………… ±20V ID —— Drain Current（Tc=25℃）……………………………………75A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate –Source Leakage Current Min Typ Max 80 2.0 Unit Test Conditions V ID=250μA ,VGS=0V 10 μA VDS = 80V，VGS=0 ±100 4.0 nA V VGS=±20V , VDS =0V VDS = VGS , ID =250μA VGS=10V, ID =37.5A VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance 0.011 0.014 Ω Ciss Input Capacitance 2600 3380 pF Coss Output Capacitance 940 1220 pF Crss td(on) Reverse Transfer Capacitance 210 275 pF Turn - On Delay Time 30 70 nS Rise Time 225 460 nS Turn - Off Delay Time 165 340 nS Fall Time 155 320 nS Qg Total Gate Charge 80 105 nC VDS =48V Qgs Gate–Source Charge 15 nC VGS=10V Qgd Gate–Drain Charge 32 nC ID=50A* tr td(off) tf Is VSD Continuous Source Current Diode Forward Voltage Thermal Resistance， Rth（j-c） Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% 75 A 1.5 V 0.87 ℃/W VDS =25V, VGS=0,f=1MHz VDD =40V, ID =75A RG= 25 Ω* IS =75A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08