Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K █ APPLICATIONS Low frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）……………………… 1W VCBO——Collector-Base Voltage………………………… -120V VCEO——Collector-Emitter Voltage……………………… -120V 1―Emitter，E 2―Collector，C 3―Base，B VEBO ——Emitter-Base Voltage………………………………-5V IC——Collector Current………………………………………-1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -120 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -120 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -1 μA VCB=-50V, IE=0 IEBO Emitter Cut-off Current -1 μA VEB=-4V, IC=0 HFE（1） DC Current Gain 60 HFE（2） DC Current Gain 20 VCE=-5V, IC=-50mA 320 VCE=-5V, IC=-500mA VCE(sat) Collector- Emitter Saturation Voltage -0.15 -0.4 V IC=-500mA, IB=-50mA VBE(sat) Base-Emitter Saturation Voltage -0.85 -1.2 V IC=-500mA, IB=-50mA tOFF Turn-Off Time 100 nS tSTG Storage 600 nS Time tF Fall Time 80 nS ft Current Gain-Bandwidth Product 110 MHz Output Capacitance 30 pF Cob See specified test circuit VCE=-10V, IC=-50mA, VCB=10V, IE=0，f=1MHz █ hFE Classification D E F 60—120 100—200 160—320 Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R AN S I S T O R HS631K