PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS649A █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 20W PC——Collector Dissipation（T A =25℃）…………………… 1W VCBO ——Collector-Base Voltage………………………… -180V 1―Emitter，E 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage……………………… -160V VEBO ——Emitter-Base Voltage……………………………… -5V IC——Collector Current………………………………………-1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ －１８０ Ｖ －１６０ Ｖ IC=-1mA, IE=0 IC=-10mA, IB=0 －５ Ｖ IE=-1mA, IC=0 HFE（1） DC Current Gain ６０ HFE（2） DC Current Gain ３０ VCE=-5V, IC=-500mA －１ Ｖ IC=-500mA, IB=-50mA Base-Emitter Voltage －１．５ Ｖ VCE=-5V, IC=-150mA Current Gain-Bandwidth Product １４０ Output Capacitance ２７ BVCBO BVCEO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current VCE(sat) Collector- Emitter Saturation Voltage VBE ft Cob Max Unit －１０ μＡ VCB=-160V, IE=0 ２００ VCE=-5V, IC=-150mA █ hFE Classification Test Conditions B C 60—120 100—200 ＭＨｚ VCE=-5V, IC=-150mA, ｐＦ VCB=-10V, IE=0，f=1ＭＨｚ