NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS669A █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 20W PC——Collector Dissipation（TA=25℃）…………………… 1W VCBO ——Collector-Base Voltage………………………… 180V 1―Emitter，E 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage……………………… 160V VEBO ——Emitter-Base Voltage……………………………… 5V IC——Collector Current………………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 180 V IC= 1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 160 V IC= 10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE= 1mA, IC=0 ICBO 10 Collector Cut-off Current HFE（1） DC Current Gain 60 HFE（2） DC Current Gain 30 VCE(sat) VBE ft Cob μA VCB=160V, IE=0 VCE= 5V, IC= 150mA 200 VCE= 5V, IC= 500mA Collector- Emitter Saturation Voltage Base-Emitter Voltage 1 V IC= 500mA, IB= 50mA 1.5 V VCE=5V, IC=150mA VCE=5V, IC=150mA, Current Gain-Bandwidth Product 140 MHz Output Capacitance 14 pF █ hFE Classification B C 60—120 100—200 VCB=10V, IE=0，f=1MHz