NPN SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD139 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 12.5W 1―Emitter, E PC——Collector Dissipation（TA=25℃）…………………… 1.25W 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage…………………………… 80V VCEO ——Collector-Emitter Voltage………………………… 80V VEBO——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 3A IC——Collector Current（DC）……………………………… 1.5A IB——Base Current………………………………………………0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 0.1 μA VCB=30V, IE=0 IEBO Emitter-Base Cut-off Current 10 μA VEB=5V, IC=0 hFE(1) DC Current Gain 25 VCE=2V, IC=5mA hFE(2) 25 VCE=2V, IC=0.5A hFE(3) 40 250 VCE=2V, IC=150mA VCE(sat) Collector-Emitter Saturation Voltage 0.5 V Ic=500mA, IB=50mA VBE(ON) Base-Emitter On Voltage 1.0 V Ic=0.5A, VCE=2V VCEO(SUS) 80 Collector-Emitter Sustaining Voltage Ic=30mA,IB=0 █hFE(3) Classification Cassification hFE(3) 6 40~100 10 16 63~160 100~250 Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSIST OR HSBD139