Shantou Huashan Electronic Devices Co.,Ltd. HTR1A80 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) █ Features * Repetitive Peak Off-State Voltage: 800V * R.M.S On-state Current(IT(RMS)=1A) * High Commutation dv/dt █ General Description The Triac HTR1A80 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） T stg ——Storage Temperature …………………………………………………………… －40~125℃ T J ——Operating Junction Temperature ………………………………………………… －40~125℃ PGM ——Peak Gate Power Dissipation ………………………………………………………… 1W PG （AV） ——Average Gate Power Dissipation ………………………………………………… 0.1W VDRM ——Repetitive Peak Off-State Voltage ………………………………………………… 800V IT （RMS）——R.M.S On-State Current（Ta=58℃）…………………………………………… 1A VGM ——Peak Gate Voltage ……………………………………………………………………… 6V IGM ——Peak Gate Current ……………………………………………………………………… 0.5A ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 9.1/10A Shantou Huashan Electronic Devices Co.,Ltd. HTR1A80 █ Electrical Characteristics （Ta=25℃） Symbol IDRM Items Min. Repetitive Peak Off-state Current Typ. Max. Unit 0.5 mA Conditions VD =VDRM, Single Phase, Half Wave, VTM Peak On-State Voltage 1.6 V T J=125℃ IT=1.5A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 5.0 mA VD =6V, RL =10 ohm I-GT1 Gate Trigger Current（Ⅱ） 5.0 mA VD =6V, RL =10 ohm I-GT3 Gate Trigger Current（Ⅲ） 5.0 mA VD =6V, RL =10 ohm I+GT3 Gate Trigger Current（Ⅳ） 10.0 mA VD =6V, RL =10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.8 V VD =6V, RL =10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.8 V VD =6V, RL =10 ohm V-GT3 Gate Trigger Voltage（Ⅲ） 1.8 V VD =6V, RL =10 ohm V+GT3 Gate Trigger Voltage（Ⅳ） 2.0 V VD =6V, RL =10 ohm VGD (dv/dt)c Non-Trigger Gate Voltage 0.2 V TJ=125℃,VD =1/2VDRM Critical Rate of Rise of Off-State Voltage at Commutation 2.0 V/µS TJ=125℃,VD =2/3VDRM (di/dt)c=-0.5A/ms Holding Current 10 mA Rth(j-c) Thermal Resistance 50 ℃/W Junction to case Rth(j-a) Thermal Resistance 120 ℃/W Junction to Ambient IH Shantou Huashan Electronic Devices Co.,Ltd. HTR1A80 █ Performance Curves Gate Characteristics Fig 2. On-State Voltage Gate Voltage (V) On-state Current [A] Fig 1. Gate Current（mA） On-state Voltage（V） Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃] RMS On-state current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature RMS On-state Current [A] Time（Cycles） Shantou Huashan Electronic Devices Co.,Ltd. HTR1A80 Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance Junction Temperature Impedance [℃/W ] Transient Thermal Junction Temperature [℃］ Ｔｉｍｅ（ｓｅｃ） Fig 9. Gate Trigger Characteristics Test Circuit Ｔｉｍｅ（ｓｅｃ） Junction Temperature [℃］ Fig 9. Gate Trigger Characteristics Test Circuit １０Ω Test ProcedureⅠ １０Ω Test ProcedureⅡ １０Ω Test Procedure Ⅲ １０Ω Test Procedure Ⅳ