NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX128M █ APPLICATIONS Suitable For Low Voltage Large Current Drivers． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………400mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO ——Collector-Base Voltage………………………………20V VCEO ——Collector-Emitter Voltage……………………………15V VE B O ——Emitter-Base Voltage………………………………6.5V I C ——Collector Current……………………………………1. 5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ２０ Ｖ BVCEO Collector-Emitter Breakdown Voltage １５ Ｖ BVEBO Emitter-Base Breakdown Voltage ６．５ Ｖ DC Current Gain １５０ IE=50μA，IC=0 VCE=1V, IC=100mA Ｖ IC=500mA, IB=50mA HFE VCE(sat) Collector- Emitter Saturation Voltage ０．２ ０．３ ICBO Collector Cut-off Current IEBO Emitter Cut-off Current fT Cob Ron Current Gain-Bandwidth Product ２６０ ５ ０．６ Output Capacitance On Resistance IC=50μA, IE=0 IC=1mA, IB=0 ０．１ μA VCB=20V, IE=0 ０．１ μA VEB=6V, IC=0 ＭＨｚ ｐＦ Ω VCE=5V, IC=50mA VCB=10V, IE=0，f=1ＭＨｚ ＶＩＮ＝０．３Ｖ，ｆ＝１ＫＨｚ，IB=1mA