HUASHAN KSH13009H

NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
KSH13009H
█　ＨＩＧＨ　ＶＯＬＴＡＧＥ　ＳＷＩＴＣＨ　ＭＯＤＥ　ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-3P
T stg ——Storage Temperature………………………… －５5~150℃
T j ——Junction Temperature……………………………… 150℃　PC——Collector Dissipation（T c=25℃）…………………… 130W
VCBO ——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
1―Base，B
VEBO ——Emitter-Base Voltage……………………………… 9V
2―Collector，C
3―Emitter, E
IC——Collector Current（DC）……………………………… 12A
IB——Base Current……………………………………………6A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　Typ　Max　Unit Test Conditions ４００　Ｖ　ｍＡ　VEB=9V, IC=0　VCE=5V, IC=5A
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0　IEBO　Emitter-Base Cut-off Current　１　HFE（1）
DC Current Gain
８　４０　HFE（2）
６　３０　VCE=5V, IC=8A
ＶＣＥ（ｓａｔ１）　Collector- Emitter Saturation Voltage
１　Ｖ　IC=5A, IB =1A
ＶＣＥ（ｓａｔ２）　１．５　Ｖ　IC=8A, IB =1.6A
ＶＣＥ（ｓａｔ３）　３　Ｖ　IC=12A, IB =3A
ＶＢＥ（ｓａｔ１）　Base-Emitter Saturation Voltage
１．２　Ｖ　IC=5A, IB=1A
ＶＢＥ（ｓａｔ２）　Cob
Output Capacitance
１．６　Ｖ　IC=8A, IB =1.6A　１８０　fT tON　tSTG　Current Gain-Bandwidth Product　Turn On Time　Storage Time　tF
Fall Time
４　ｐＦ　VCB=10V,f=0.1MHz
ＭＨｚ　VCE =10V,IC=0.5A　VCC=125V, IC=8A,　１．１　μs　IB1 =1.6A,IB2 =-1.6A　３．０　μs　０．７　μs　ＲＬ＝１５．６Ω
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13009H
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13009H