PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 40 • Broadband internal matching -20 -25 Gain 20 -30 Efficiency 0 -35 -40 IMD_lower -10 -45 -20 IMD_upper -30 30 35 -50 ACPR IMD (dBc) , ACPR (dBc) Gain (dB) , Drain Efficiency (%) VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz Bandwidth 10 45 • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion = –32 dBc - Adjacent channel power = –42.5 dBc • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift -55 40 PTFA092213FL Package H-34288-4/2 Features Two-carrier WCDMA Performance 30 PTFA092213EL Package H-33288-6 • Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power 50 Output Power (dBm) • Pb-free, RoHS-compliant RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 50 W average, ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency hD — 29 — % Intermodulation Distortion IMD — –32 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 17.5 — dB Drain Efficiency hD 40 42 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.04 — W Operating Gate Voltage VDS = 30 V, IDQ = 1850 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 220 W CW) RqJC 0.23 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFA092213EL V4 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tray PTFA092213EL V4 R250 H-33288-6 Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs PTFA092213FL V5 Thermally-enhanced, earless flange, single-ended Tray H-34288-4/2 PTFA092213FL V5 R250 H-34288-4/2 Data Sheet Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs 2 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Typical Performance CW Performance Gain & Efficiency vs. Output Power CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz 20 50 17 40 16 30 15 20 Efficiency 14 13 35 40 45 50 Gain (dB) Gain 18 70 TCA S E = -10°C TCA S E = 25°C TCA S E = 90°C 20 60 Drain Efficiency (%) 19 Gain (dB) 21 70 19 60 Efficiency 50 18 40 17 30 16 20 10 15 0 14 Gain 10 0 35 55 Drain Efficiency (%) VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz 40 45 50 55 Output Power (dBm) Output Power (dBm) Power Sweep, CW Broadband Two-tone Gain, Efficiency & Return Loss vs. Frequency VDD = 30 V, ƒ = 960 MHz VDD = 30 V, IDQ = 1.85 A, PO UT = 110 W 0 -5 Efficiency 40 -10 35 -15 Return Loss 30 25 -20 -25 20 -30 Gain 15 19 Power Gain (dB) 45 20 Return Loss (dB) Drain Efficiency (%), Gain (dB) 50 -35 10 -40 IDQ = 2.6 A 17 IDQ = 1.85 A 16 IDQ = 1.1 A 15 900 910 920 930 940 950 960 970 980 990 35 40 45 50 55 Output Power (dBm) Frequency (MHz) Data Sheet 18 3 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Typical Performance (cont.) IS-95 CDMA Performance Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.85 A, ƒ = 960 MHz -20 5th Drain Efficiency (%) IMD (dBc) -30 3rd Order -40 -50 -60 7th 50 -30 40 -40 Adj 750 kHz 30 Efficiency -50 -60 20 Alt1 1.98 MHz -70 10 -80 0 -70 35 40 45 50 30 55 Output Power, PEP (dBm) Adj. Ch. Power Ratio (dBc) VDD = 30 V, IDQ = 1.85 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz 35 40 45 Output Power (dBm), Avg. 50 Single-carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8.5 dB, 3.84 MHz Bandwidth -30 50 -35 IMD 40 -40 30 -45 Gain 20 -50 Efficiency 10 IMD (dBc) Gain (dB), Efficiency (%) 60 -55 0 -60 30 35 40 45 50 Output Power (dBm) Data Sheet 4 of 10 Rev. 04, 2010-11-04 3 R --> Z Source W Frequency Z Load W MHz R jX R jX 910 1.44 –3.01 1.57 –2.30 920 1.43 –2.92 1.56 –2.18 930 1.42 –2.83 1.55 –2.05 940 1.42 –2.74 1.54 –1.93 950 1.41 –2.66 1.53 –1.81 960 1.41 –2.57 1.52 –1.69 970 1.41 –2.48 1.51 –1.56 0.1 0.0 Z Load 970 MHz 910 MHz 970 MHz 910 MHz Z Source 0.1 AV S W <--- G DT OW ARD LOA GT HS EL EN Z Load Z0 = 50 Ω 0.2 RD G E NE RA T O - W AV E LE NGT H S T OW A D 0. 1 Broadband Circuit Impedance Z Source 0. 2 Confidential, Limited Internal Distribution 0. PTFA092213EL PTFA092213FL 0. 2 See next page for reference circuit information 0. 45 0. 05 0. 3 Data Sheet 5 of 10 0. 4 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K C2 .001µF QQ1 LM7805 R1 1.2K VDD Q1 BCP56 C3 0.001µF C4 0.001µF R3 1.0K C5 0.001µF R4 1.2K VDD R5 1.2K R6 10 C6 .01µF C15 10µF R7 10 C16 10µF C17 .01µF C18 1µF C8 4.7µF C9 .01µF C10 33pF 6 C29 1.7pF 9 10 C21 10µF 50V 11 C31 33pF 12 13 RF_OUT C30 1.7pF 8 C11 33pF 1 C20 10µF 7 R8 5.1K C7 47pF R9 10 RF_IN C19 10µF DUT 2 3 C12 3.0pF 4 5 C13 4.8pF C22 10µF C14 4.8pF C23 10µF C24 .01µF C25 1µF C26 10µF C27 10µF C28 10µF 50V a092213efl_bd_09-02-2010 Reference circuit block diagram for ƒ = 960 MHz Circuit Assembly Information DUT PTFA092213EL or PTFA092213FL PCB LTN/PTFA092213EF 0.76 mm [.030"] thick, er = 3.48, Rogers RO4350, 1 oz. copper Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) l1 0.167 l, 50.1 W 31.75 x 1.65 1.250 x 0.065 l2 0.047 l, 38.0 W 8.38 x 2.54 0.330 x 0.100 l3 0.039 l, 38.0 W 7.37 x 2.54 0.290 x 0.100 l4 0.072 l, 7.8 W 12.45 x 17.78 0.490 x 0.700 l5 0.046 l, 7.8 W 7.87 x 17.78 0.310 x 0.700 l6 0.163 l, 78.3 W 31.75 x 0.74 1.250 x 0.029 l7, l8 0.043 l, 23.5 W 7.75 x 4.95 0.305 x 0.195 l9 0.130 l, 8.3 W 22.61 x 16.51 0.890 x 0.650 l10 (taper) 0.032 l, 8.3 W / 11.7 W 5.72 x 16.51 / 11.30 0.225 x 0.650 / 0.445 l11 (taper) 0.053 l, 11.7 W / 37.0 W 9.78 x 11.30 / 2.64 0.385 x 0.445 / 0.104 l12 0.009 l, 37.0 W 16.51 x 2.64 0.650 x 0.104 l13 0.167 l, 50.1 W 31.75 x 1.65 1.250 x 0.065 Data Sheet 6 of 10 Rev. 04, 2010-11-04 PTFA 092213EFL ZONE REFERENCE ON GRAPHIC: a092213efl_cd_7-9-09 PTFA092213EL V66100-G9270-C331-01-7631.dwg REV A INITIA PTFA092213FL a092213efl_CD Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD C1 C4 C2 R1 R2 C8 C9 R8 R4 C5 C16 C15 QQ1 C10 Q1 C18 C19 C20 VDD C21 R5 C7 C6 R7 R6 R9 C3 R3 C17 C13 C29 RF_IN C31 RF_OUT C11 C30 C12 C14 C24 C28 C22 C26 C23 C25 C27 VDD a092213efl_cd_11-04-2010 Reference circuit assembly diagram (not to scale)* APPROVA DRAWN BY: B Northwood Component Description Suggested Manufacturer P/N C1, C2, C3, C4, C5 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C18, C25 Capacitor, 1 µF THIS DOCUEFLENT AND THE INFOREFLATION AND IDEAS CONTAINED HEREIN, ARE THE PROPERTY OF INFINEON TECHNOLOGIES AND SHALL BE EFLAINTAINED IN CONFIDENCE AND SHALL NOT BE DISCLOSED, DUPLICATED, COPIED OR USED AS A BASIS FOR THE EFLANUFACTURE OR SALE OF ANY PRODUCT OR PROCESS WITHOUT PRIOR WRITTEN CONSENT OF INFINEON TECHNOLOGIES. CHECKED BY: XX ATC 920C105 C8 Capacitor, 4.7 µF, 16 V Digi-Key PCS3475CT-ND C6, C9, C17, C24 Capacitor, 0.01µF ATC 200B 103 C15, C16, C19, C20, C22, C23, C26, C27 Tantalum Capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400 C21, C28 Tantalum Capacitor, 10 µF, 50 V C29, C30 Ceramic Capacitor, 1.7 pF ATC 100B 1R7 C13, C14 Ceramic Capacitor, 4.8 pF ATC 100B 4R8 EUS/KR FOREFL 148E Digi-Key P5571-ND C12 Ceramic Capacitor, 3.0 pF ATC 100B 3R0 C10, C11, C31 Ceramic Capacitor, 33 pF ATC 100B 330 C7 Q1 QQ1 R1, R4 Ceramic Capacitor, 47 pF ATC 100B 470 Transistor Infineon Technologies BCP56 Voltage Regulator National Semiconductor LM7805 Chip Resistor, 1.2 k W Digi-Key P1.2KGCT-ND R2 Chip Resistor, 1.3 k W Digi-Key P1.3KGCT-ND R3 Chip Resistor, 2 k W Digi-Key P2KECT-ND R5 Potentiometer, 2 k W Digi-Key 3224W-202ETR-ND R8 Chip Resistor, 5.1 k W Digi-Key P5.1KECT-ND R6, R7, R9 Chip Resistor, 10 W Digi-Key P10ECT-ND * Gerber Files for this circuit available on request Data Sheet THE CO REPRE ONLY, A PRODU 7 of 10 Rev. 04, 2010-11-04 ENGINEER: XX R & D EFLANAGER XX EFLFG ENGINEER: XX QA: XX THIRD ANGL PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 45° X 2.032 [45° X .080] 4X 30° 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) V D 4.889±.510 [.192±.020] V S CL 2X R1.626 [R.064] G E 9.398 [.370] 9.779 [.385] 19.558±.510 [.770±.020] F H -33288 - 6_ po _02 -18 - 2010 CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 22.352±.200 [.880±.008] 1.575 [.062] (SPH) 4.039 +.254 –. 127 010 [.159 +. –. 005 ] CL 34.036 [1.340] 1.016 [.040] Diagram Notes—unless otherwise specified: Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 8 of 10 Rev. 04, 2010-11-04 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-4/2 22.860 [.900] 45° X 2.032 [45° X .080] 2X 5.080 [.200] 2X 1.143 [.045] C L 2X 30° V V D 9.779 [.385] 9.398 [.370] C L 4X R0.508+.381 -.127 R.020+.015 -.005 19.558±.510 [.770±.020] G ] [ 4.889±.510 [.192±.020] 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352±.200 [.880±.008] [ ] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 .dwg 1.575 [.062] (SPH) C L 1.016 [.040] 23.114 [.910] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 04, 2010-11-04 PTFA092213EL V4/ PTFA092213 FL V5 Confidential, Limited Internal Distribution Revision History: 2010-11-04 Previous Version: 2010-09-03, Data Sheet Page Subjects (major changes since last revision) 1, 2, 8 Updated eared flange package information Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-11-04 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04, 2010-11-04