ETC 07N70CP-A

SSM07N70CP,R-A
N-channel Enhancement-mode Power MOSFET
BVDSS
Dynamic dv/dt rating
D
Repetitive Avalanche Rated
1.2Ω
R DS(ON)
Fast Switching
I
Simple Drive Requirement
675V
7A
D
G
S
DESCRIPTION
The SSM07N70C series is specially designed as a main switching device
for universal 90~265VAC off-line AC/DC converter applications.
Both TO-220 and TO-262 type provide high blocking voltage to overcome
voltage surge and sag in the toughest power system with the best
combination of fast switching,ruggedized design and cost-effectiveness.
G
D
The TO-220 and TO-262 packages are widely preferred for all commercial
and industrial applications. The device is well suited for switch-mode
power supplies, AC-DC converters and high-current high-speed switching
circuits.
G
D
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TO-220 (P)
S
S
TO-262 (R)
Rating
Units
VDS
Drain-Source Voltage
675
V
VGS
Gate-Source Voltage
± 30
V
ID @ TC=25°C
Continuous Drain Current, VGS @ 10V
7
A
ID @ TC=100°C
Continuous Drain Current, VGS @ 10V
4.4
A
1
IDM
Pulsed Drain Current
18
A
PD @ TC=25°C
Total Power Dissipation
89
W
0.7
W/°C
140
mJ
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
7
A
EAR
Repetitive Avalanche Energy
7
mJ
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
THERMAL DATA
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.4
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
°C/W
3/21/2005 Rev.2.01
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SSM07N70CP,R-A
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
675
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.6
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
-
-
1.2
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.5A
-
4.5
-
S
VDS=675V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=7A
-
32
-
nC
VGS=0V, ID=1mA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
8.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9
-
nC
VDD=300V
-
17
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=10Ω, VGS=10V
-
35
-
ns
tf
Fall Time
RD=43Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
2075
-
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
-
-
7
A
-
-
18
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25°C, IS=7A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A.
3.Pulse width <300us , duty cycle <2%.
3/21/2005 Rev.2.01
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SSM07N70CP,R-A
12
T C =25 o C
V G =10V
V G =10V
V G =6.0V
V G =6.0V
V G =5.5V
ID , Drain Current (A)
ID , Drain Current (A)
10
T C =150 o C
8
8
6
V G =5.0V
4
V G =5.5V
6
V G =5.0V
4
2
V G =4.0V
2
V G =4.0V
0
0
0
5
10
15
20
0
25
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =3.5A
V G =10V
2.5
Normalized R DS(ON)
Normalized BVDSS (V)
1.1
1
2
1.5
1
0.9
0.5
0.8
0
-50
0
50
100
150
-50
0
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS vs. Junction
Temperature
3/21/2005 Rev.2.01
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM07N70CP,R-A
8
100
7
80
ID , Drain Current (A)
6
5
PD (W)
60
4
40
3
2
20
1
0
0
25
50
75
100
125
150
0
50
o
100
150
o
T c , Case Temperature ( C)
Tc , Case Temperature( C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
Normalized Thermal Response (R thjc)
100
10
ID (A)
10us
100us
1
1ms
o
T c =25 C
Single Pluse
10ms
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
SINGLE PULSE
0.02
T
0.01
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
100ms
0
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
3/21/2005 Rev.2.01
0.001
Fig 8. Effective Transient Thermal Impedance
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SSM07N70CP,R-A
16
I D =7A
14
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
Ciss
V DS =320V
12
V DS =400V
10
C (pF)
V DS =480V
8
Coss
100
6
4
Crss
2
0
1
0
5
10
15
20
25
30
35
40
45
1
50
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
5
100
4
10
T j = 25 o C
3
VGS(th) (V)
IS (A)
T j = 150 o C
1
2
0.1
1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3/21/2005 Rev.2.01
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM07N70CP,R-A
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
D
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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