ETC 2N7000P

-. —. —-..-...,, ...—
N-CHANNEL
2-
MARCH
.
.
.-
2N7000P
MODE VERTICAL DMOS FET
ISSUE
“,..
ENHANCEMENT
I
94
FEATURES
*
60 Volt VcEo
*R
0S(0.)
= 5 ‘2
D
G
s
v
ABSOLUTE MAXIMUM
lJ&h!sJ
RATINGS.
SYMBOL
PARAMETER
Drain-Source
Voltage
Continuous
Pulsed
Power
‘DS
Drain Current
Operating
and Storage
Drain-Source
Voltage
Gate-Source
—Gate-Body
Breakdown
Threshold
Voltage
—
Leakage
Zero Gate Voltege
MIN.
BVDss
60
‘GS(th)
_ 0.8
———.
On-State
——-.—
— .——
~~
Drain Current(1)
—.—
.——
ID(m)
Static Drain-Source
Voltage (1)
On-State
‘DS(on)
Static Drain-Source
Resistance (1)
On-State
RDs&
(2)
__, _
Common Source
Capacitance
(2)
Output
+150
\
UNIT
CONDITIONS.
v
ID=l OIA, VGsOV
v
lD=lmA,
10
nA--
- ‘“
[email protected]
1
1
UA
mA
—
VD~48V,
VDs48V,
VG~O
VG~OV,
mA
VDSIOV,
VGF4.5V
V v
VGs.=10V,lD.500mA
2.5
0.4
5 T
‘;
“-
VD=
15V,
“c
.—
VGs
vD~=ov
T=125°C(2)
;;~;;;$;%--–
AL-P–E.-.;
Capacitance
I
c 0ss
1
—. —-—
Transfer
2A.
-55to
1’
input Capacitance
——. .——.
———
‘Reve;se
mW
---–-
q+f 75
~
v
-1
3
lD~s
mA
i 40
—
MAX.
lGSS
Drain Current
v
mA
—
Ti:T~tg
SYMBOL
‘–
’500
Ptot
——
Range
Temperature
PARAMETER
—-
——+—
‘GS
at Tamb=250C
UNIT
200
lDM
Voltage
Dissipation
~
60
—
ID
at Tamb=250C
Drain Current–-
Gate-Source
VALUE
(2)
~
25
5
I
pF
VD-725V,
VGs:OV,
f= 1MHz
-4
pF
——
———
— --–—
TurmOn Time (2)(3)
10
ns
\ VDD=15V,
lD=500mA
‘(on)
~ Rg=25Q, RL=25Q
Turn-Off Time (2)(3)
10
ns
Voff)
I
) Measured
under pulsed conditions.
Width=300ps.
Duty cycle <2% (2) Sample test.
1)Switching
times measured with 50Q source impedance
and <5ns rise time on a pulse generator
c,,,
3-13
~