VBT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation K • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Compliant to RoHS Directive 2011/65/EU 2 1 TYPICAL APPLICATIONS VBT1045BP PIN 1 PIN 2 K For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) 10 A VRRM 45 V Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade IFSM 100 A VF at IF = 10 A 0.52 V Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test TOP max. (AC mode) 150 °C Polarity: As marked TJ max. (DC forward current) 200 °C Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT1045BP UNIT VRRM 45 V IF(DC) (1) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction temperature range (AC mode) TOP - 40 to + 150 °C Junction temperature in DC forward current without reverse bias, t 1 h TJ (2) 200 °C Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 23-Feb-12 Document Number: 89452 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT1045BP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A TA = 25 °C IF = 10 A Instantaneous forward voltage VF (1) IF = 5 A TA = 125 °C IF = 10 A TA = 25 °C VR = 45 V Reverse current SYMBOL IR (2) TA = 125 °C TYP. MAX. 0.50 - UNIT 0.57 0.68 0.41 - 0.52 0.64 - 500 μA 5 15 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VBT1045BP UNIT RJC 3.0 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-263AB VBT1045BP-E3/4W PREFERRED P/N 1.37 4W 50/tube DELIVERY MODE Tube TO-263AB VBT1045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 Instantaneous Forward Current (A) 100 DC Forward Current (A) 10 8 6 4 DC Forward Current at Thermal Equilibrium 2 0 0 25 50 75 100 125 150 175 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 23-Feb-12 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Document Number: 89452 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT1045BP Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) www.vishay.com TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 20 40 60 80 10 100 Junction to Case 1 0.01 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) Revision: 23-Feb-12 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 89452 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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