WSB1151 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT AMPLIFIER ◇ Low Collector Saturation Voltage ◇ Complement to WSD1691 WR0459 ABSOLUTE MAXIMUM RATINGS Characteristic (Ta=25℃) Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -7 V Collector Current(DC) IC -5.0 A Collector Current(Pulse) IC -8.0 A Collector Power Dissipation(Tc=25℃) PC 20 W Collector Power Dissipation(Ta=25℃) PC 1.3 W 1. Emitter Junction Temperature Tj 150 ℃ 2. Collector Storage Temperature Tstg -55~ +150 ℃ ELECTRICAL CHARACTERISTICS 1 2 3 3. Base (Ta=25℃, unless otherwise specified) Characteristic Symbol Test Condition Min TYP MA X Unit Collector Cut-off Current ICBO VCB=-50V ,IE=0 -10 ㎂ Emitter Cut-off Current IEBO VEB=-7V ,IC=0 -10 ㎂ *DC Current Gain hFE1 #hFE2 hFE3 VCE=-1V ,IC=-100mA VCE=-1V ,IC=-2.0A VCE=-2V, IC=-5.0A 60 100 50 200 400 *Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-200mA -0.14 -0.3 V *Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-200mA -0.9 -1.2 V Turn on Time tON IC=-2.0A, RL=5Ω 0.15 1 ㎲ Storage Time tSTG IB1=-IB2=200mA, 0.78 2.5 ㎲ VCC=-10V 0.18 1 ㎲ Fall Time tF * Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed # hFE(2) Classification: Classification O Y G hFE 100~200 160~320 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2 WSB1151 DC Current Gain Static Characteristics 1000 -12 VCE=-2V IB=-200mA -10 300 hFE ,DC Current Gain Ic, Collector Current, A IB=-100mA -8 IB=-60mA -6 -4 IB=-30mA IB=-20mA -2 IB=-10mA 0 -0.4 -0.8 -1.6 -1.2 100 30 10 -0.01 -2.0 -0.03 Vce,Collector-Emitter Voltage ,V VBE(sat) VCE(sat),Saturation Voltage,V 、 Current Gain Bandwidth Product,fT(MHZ) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage IC=10IB - -1000 VBE(sat) -100 VCE(sat) -10 -1 -10 -100 -1000 -2000 -10 VCE=-5V 300 100 50 30 10 1 -0.01 -10 30 Ic(A)Collector Current Pc(W),Power Dissipation 20 15 10 5 150 -3 -1 -0.1 -1 -2 IC,Collector Current,A Power Derating 100 -0.3 Current Gain-Bandwidth Product 1000 IC,Collector Current,mA 50 -0.1 IC,Collector Current ,A 200 Tc(℃), Case Temperature 250 Safe Operating Area Ic Max(Pulse) 1mS -3 10mS Ic Max(DC) 100uS -1 -0.3 -0.1 -0.01 -1 -3 -10 -30 -100 -300 -1000 VCE(V),Collector Emitter Voltage JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2