R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 170 W 1.0°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°°C SYMBOL CHARACTERISTICS TEST CONDITIONS ΒVdss Idss Drain-Source Breakdown Drain-Source Leakage Current Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Igss Gate-Source Leakage Current Vgs = 20V, Vds = 0V Vgs(th) Vds(on) gFS Ciss Crss Coss Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz MIN TYP 65 70 2 4 0.7 2.2 90 5 60 MAX UNITS V 1 A 1 A 5 V V S pF pF pF FUNCTIONAL CHARACTERISTICS @ 25°°C GPS Common Source Power Gain ηd Drain Efficiency IMD3 Intermodulation Distortion, 3rd Order Ψ Load Mismatch Vds = 28V, Idq = 0.3A, F = 900MHz, Pout = 60W Vds = 28V, Idq = 0.3A, F = 900MHz, Pout = 60W Vds = 28V, Idq = 0.3A, Pout =60WPEP, F1 = 900 MHz, F2 = 900.1 MHz Vds = 28V, Idq = 0.3A, F = 900MHz, Pout = 60W 14 dB 50 % -30 dBc 10:1 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120