5.0mm INFRARED EMITTING 520E940C DIODE REV:A / 0 PACKAGE DIMENSIONS Note: 1.All Dimensions are in millimeters. 2.Tolerance is ±0.25mm(0.010 ") Unless otherwise specified. 3.Protruded resin under flange is 1.5mm(0.059 ") max. 4.Lead spacing is measured where the leads emerge from the package. 5.Specification are subject to change without notice DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 Page : 1 QR0202-10B 5.0mm INFRARED EMITTING 520E940C DIODE REV:A / 0 FEATURES * EXTRA HIGH RADIANT POWER AND RADIANT INBTENSITY * LOW FORWARD VOLTAGE * SUITABLE FOR HIGH PULSE CURRENT OPERATIONTENSITY *HIGH RELIABILITY CHIP MATERIALS * Dice Material : GaA1As/GaAs * Lens Color : WATER CLEAR ABSOLUTE MAXIMUM RATING : ( Ta = 25°C ) SYMBOL PARAMETER INFRARED UNIT 100 mW 5 V mA PD Power Dissipation VR Reverse Voltage IF Average Forward Current 100 Topr Operating Temperature Range -35°C to 85°C Tstg Storage Temperature Range -35°C to 85°C Lead Soldering Temperature｛1.6mm(0.063 inch) From Body｝250°C ± 5°C for 3 Seconds ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C ) SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT IF = 10mA 1.2 IF = 50mA 1.4 V VF Forward Voltage IR Reverse Current VR = 5V λP Peak Emission Wavelength IF = 10mA 940 nm Half Intensity Angle IF = 10mA 22 deg Radiant Intensity IF = 10mA 30 mw/sr 2θ1/2 IE DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 1.6 10 µA Page : 2 QR0202-10C 5.0mm INFRARED EMITTING 520E940C DRAWING NO. : DS-23-02-0005 DATE : 2002-02-28 DIODE REV:A / 0 Page : 3