6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Symbol Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current V RRM V RSM One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current IFSM I2t Tj VCES VGES IC Brake Converte Item Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque IO Condition Rating 1600 1760 ICP 1ms PC V RRM Tj Tstg Viso 1 device V V A 75 50Hz/60Hz sine wave Tc=115°C From rated load From rated load DC Unit 600 1440 -40 to +125 1400 ±20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 Tc=25°C Tc=75°C Tc=25°C Tc=75°C AC : 1 minute M5 screw A A 2s °C V V A A W V °C °C V N·m Electrical characteristics (Tj=25°C unless otherwise specified) Brake Co. Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Symbol V FM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM Condition Min. Tj=25°C, IFM=75A Tj=150°C, VR=VRRM VGE=0V. V CE=1400V VCE =0V. VGE=±20V VGE=15V. IC=35A Vcc=800V Ic=35A VGE=±15V RG=33ohm Typ. 2.4 0.35 0.25 0.45 0.08 Max. 1.35 15 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 Unit Max. Unit V mA mA nA V µs mA Thermal characteristics Item Symbol Thermal resistance Rth(j-c) Thermal Resistance(Case to fine) Rth(c-f) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. 0.16 0.96 0.70 0.08 °C/W °C/W Diode Module 6R1MBi75P-160 O utp ut C urre nt - T o ta l L o s s Forward Characteristics 250 80 max 70 typ 60 50 Total Loss (W) Forward Current IF (A ) 200 150deg 25deg 40 30 150 100 20 50 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 0 Forward Voltage 20 40 60 80 O u t p u t C u rre n t Io (A ) S u rg e C u rre n t 130 700 120 600 Peak Surge Current IFSM(A) Case Temperature Tc(deg.C) O u tp u t C u r re n t - C a s e T e m p e ra tu r e 110 100 90 80 70 500 400 300 200 100 60 50 0 20 40 60 0 0 .0 1 80 0 .1 O u t p u t C u rre n t Io ( A ) 1 T im e Transient Thermal Impedance [ B ra ke ] Tra nsie nt The rm a l Im p e d a nce 1 10 Zth(j-c)(t) (deg.C/W) Zth(j-c)(deg.C/W) FW D 0.1 0.01 0.001 0.001 0.01 0.1 Tim e ( ) 1 10 1 IG BT 0.1 0.01 0.001 0.01 0.1 Tim e (s ec ) 1 10 6R1MBi75P-160 Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 80 VGE= 20V 15V 12V VGE= 20V 15V 12V 60 Collector current : Ic [ A ] 10V 40 20 10V 40 20 8V 8V 0 0 0 1 2 3 4 5 0 3 4 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 5 10 Tj= 125°C Collector - Emitter voltage : VCE [ V ] Tj= 25°C 60 Collector current : Ic [ A ] 2 Collector - Emitter voltage : VCE [ V ] 80 40 20 0 8 6 4 Ic= 70A Ic= 35A 2 Ic= 17.5A 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 10 15 20 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 1000 Cies 1000 Coes Cres 100 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 25 800 20 600 15 400 10 200 5 0 0 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 Capacitance : Cies, Coes, Cres [ pF ] 1 Collector - Emitter voltage : VCE [ V ] 0 100 200 Gate charge : Qg [ nC ] 300 0 400 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 60 Diode Module 6R1MBi75P-160 Outline Drawings, mm 90 78.5 11.75 4- Ø 6.1 14 7 7 C3 21 7 0.5 2- Ø5.5 - E G 11 + 32 11 16 23.5 C K 11.75 14 14 28.5 3 Ø 2.5 R1 3.4 2 x t1 6R1MBi100P-160 6R1MBi75P-160 JAPAN Equivalent Circuit Schematic K C G E 20.4 17 13 6 1.5 Ø 2.1