ETC AO4916L

Rev 3: Nov 2004
AO4916, AO4916L( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4916 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. AO4916L
( Green Product ) is offered in a lead-free package.
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
D1
D2
D2
G1
S1/A
1
2
3
4
K
G2
D1/S2/K
D1/S2/K
D1/S2/K
8
7
6
5
A
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Pulsed Drain Current
A
TA=70°C
B
TA=25°C
Continuous Forward Current
A
TA=70°C
B
S2
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
C
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±20
8.5
V
6.6
A
40
IF
PD
Schottky
30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
G2
S1
SOIC-8
Continuous Drain Current
D2
30
3
V
2
A
2
40
2
1.28
1.28
-55 to 150
-55 to 150
°C
Typ
Max
Units
48
62.5
74
35
110
40
47.5
62.5
71
32
110
40
W
°C/W
°C/W
AO4916, AO4916L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=8.5A
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=8.5A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
1
V
100
nA
3
V
14
17
20
25
21
27
mΩ
1
V
3
A
1250
pF
A
23
1040
VGS=0V, VDS=15V, f=1MHz
180
VGS=10V, VDS=15V, ID=8.5A
0.35
mΩ
S
pF
110
VGS=0V, VDS=0V, f=1MHz
µA
1.8
0.76
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
0.005
Units
5
VGS(th)
IS
Max
TJ=55°C
IGSS
RDS(ON)
Typ
pF
0.7
0.85
Ω
19.2
24
nC
9.36
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.2
tD(on)
Turn-On DelayTime
5.2
7.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
2.6
nC
nC
ns
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
4.4
6.5
ns
17.3
25
ns
3.3
5
ns
IF=8.5A, dI/dt=100A/µs
16.7
21
Qrr
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
9.3
11
ns
nC
V
Irm
CT
Maximum reverse leakage current
Junction Capacitance
0.45
0.5
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
VR=30V, TJ=150°C
12
37
20
VR=15V
mA
pF
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4V
10V
25
20
3.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
13.4
VGS=3V
5
22
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
16
26
0.763
2.5
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
26
Normalized On-Resistance
1.6
24
VGS=4.5V
22
RDS(ON) (mΩ)
25°C
4
20
18
16
VGS=10V
14
12
10
VGS=10V
ID=8.5A
1.4
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
50
1.0E+00
ID=8.5A
1.0E-01
30
IS (A)
RDS(ON) (mΩ)
40
125°C
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=8.5A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
0
0
4
100.0
8
12
16
20
0
22
26
5
100µs
1ms
10.0
0.1s
1s
TJ(Max)=150°C
TA=25°C
DC
30
30
20
0
0.001
0.1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
25
10
10s
1
20
TJ(Max)=150°C
TA=25°C
40
10µs
10ms
0.1
15
0.76
50
RDS(ON)
limited
1.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
ID (Amps)
16
Crss
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
ZθJA Normalized Transient
Thermal Resistance
13.4
250
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
Document No.
ALPHA & OMEGA
Version
Title
SEMICONDUCTOR, LTD.
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
NOTE:
LOGO
4916
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4916
AO4916L
Standard product
Green product
CODE
4916
4916
Green product
PD-00071
rev C
AO4916 Marking Description
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
SO-8 Tape and Reel Data