ETC BCP869

BCP869
BC869
SOT-89
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
1. BASE
500
mW (Tamb=25℃)
-2
A
-32
V
2. COLLECTOR
3. EMITTER
Operating and storage junction temperature range
TJ, Tstg: -65℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-0.1mA, IE=0
-32
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-25V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
µA
hFE(1)
VCE=-10V, IC= -5mA
VCE=-1V, IC= -500mA
VCE=-1V, IC= -1A
50
100
60
375
hFE(2)
VCE=-1V, IC= -500mA
100
160
250
375
VCE(sat)
IC=-1A, IB= -100mA
DC current gain
BC869-16
BC869-25
Collector-emitter saturation voltage
Transition frequency
DEVICE MARKING
fT
BC869=CEC
WEJ ELECTRONIC CO.
BC869-16=CGC
VCE=-5V, IC=-10mA
f = 100MHz
0.5
40
BC869-25=CHC
Http:// www.wej.cn
E-mail:wej@yongerjia.com
V
MHz