APTM20SKM04G Buck chopper MOSFET Power Module VDSS = 200V RDSon = 4mΩ typ @ Tj = 25°C ID = 372A @ Tc = 25°C Application VBUS Q1 • • G1 Features OUT • S1 CR2 0/VBUS • • • VBUS 0/VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT S1 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 372 278 1488 ±30 5 1250 100 50 3000 Unit V A V mΩ W A July, 2006 • • • • • mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20SKM04G – Rev 2 G1 AC and DC motor control Switched Mode Power Supplies APTM20SKM04G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 200V Tj = 25°C VGS = 0V,VDS = 160V T j = 125°C VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VRRM IRM VGS = 10V VBus = 100V ID = 372A IF VF trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit Max Unit nC 32 Test Conditions ns 88 116 3396 µJ 3716 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2Ω 3744 µJ 3944 Min Typ Max 200 IF = 300A IF = 600A IF = 300A IF = 300A VR = 133V di/dt = 600A/µs www.microsemi.com mΩ V nA nF 64 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2Ω VR=200V µA 268 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A R G = 1.2Ω DC Forward Current Diode Forward Voltage Typ 28.9 9.32 0.58 560 Max 500 2000 5 5 ±200 212 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 4 3 Min Chopper diode ratings and characteristics Symbol Characteristic Typ Tj = 25°C Tj = 125°C Tc = 80°C Unit V 250 750 Tj = 125°C 300 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C 110 Tj = 25°C 600 Tj = 125°C 2520 µA A 1.1 V ns July, 2006 IDSS Characteristic nC 2–7 APTM20SKM04G – Rev 2 Symbol APTM20SKM04G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.2 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM20SKM04G – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM20SKM04G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 1200 VGS=15V 2500 10V 2000 9V 1500 8.5V 8V 1000 7.5V 7V 500 ID, Drain Current (A) VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25°C 200 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 186A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 400 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 350 300 250 200 150 100 0.8 50 0 0 100 200 300 400 500 600 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 4–7 APTM20SKM04G – Rev 2 ID, Drain Current (A) 3000 APTM20SKM04G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 186A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 1000 limited by RDSon 100µs 100 0.6 1ms Single pulse TJ=150°C TC=25°C 10 10ms 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=372A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 5–7 APTM20SKM04G – Rev 2 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20SKM04G Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) and td(off) (ns) t d(off) 80 t d(on) 120 100 tr 60 40 20 0 0 0 100 200 300 400 500 I D, Drain Current (A) 600 0 100 200 300 400 500 ID, Drain Current (A) 600 Switching Energy vs Gate Resistance Switching Energy vs Current 12 8 VDS=133V RG=1.2Ω TJ=125°C L=100µH 6 Eoff Switching Energy (mJ) Eon and Eoff (mJ) tf 80 20 Eon 4 2 Eoff V DS=133V ID=372A T J=125°C L=100µH 10 8 Eoff 6 Eon 4 0 2 0 100 200 300 400 500 600 0 I D, Drain Current (A) Operating Frequency vs Drain Current 250 200 ZVS 150 ZCS 100 Hard switching 50 0 50 100 150 200 250 5 7.5 10 12.5 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=1.2Ω T J=125°C T C=75°C 300 2.5 Gate Resistance (Ohms) 350 Frequency (kHz) V DS=133V R G=1.2Ω T J=125°C L=100µH 140 100 1000 100 TJ=150°C TJ =25°C 10 350 I D, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–7 APTM20SKM04G – Rev 2 July, 2006 VSD, Source to Drain Voltage (V) www.microsemi.com 7–7 APTM20SKM04G – Rev 2 July, 2006 APTM20SKM04G