MICROSEMI APTGF30H60T3G

APTGF30H60T3G
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
19
Q2
22
7
23
8
CR2
26
Q3
11
10
CR4
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Q4
4
27
3
29
31
30
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
42
30
100
±20
140
Tj = 125°C
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TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
July, 2006
CR3
CR1
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGF30H60T3G – Rev 1
Q1
18
VCES = 600V
IC = 30A @ Tc = 80°C
APTGF30H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Tj = 25°C
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 30A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20V, VCE = 0V
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Min
Test Conditions
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
250
500
2.45
VR=600V
IF = 15A
VR = 400V
di/dt =200A/µs
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µA
V
V
nA
Max
Unit
pF
nC
ns
32
12
90
ns
21
0.3
mJ
0.8
Typ
Max
Unit
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 15A
IF = 30A
IF = 15A
Unit
6
400
600
DC Forward Current
Diode Forward Voltage
Typ
1350
193
120
99
10
60
30
12
80
Max
15
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
2.0
2.2
4
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 30A
R G = 6.8Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 30A
R G = 6.8Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 30A
Tj = 125°C
R G = 6.8Ω
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
1.7
VGE = 15V
VBus = 300V
IC =30A
Fall Time
Tf
Typ
VGE = 0V
VCE = 600V
Zero Gate Voltage Collector Current
VCE(on)
Min
150
500
Tj = 125°C
15
1.6
1.9
1.4
Tj = 25°C
40
Tj = 125°C
Tj = 25°C
150
95
Tj = 125°C
520
µA
A
1.8
V
July, 2006
ICES
Test Conditions
ns
nC
2-6
APTGF30H60T3G – Rev 1
Symbol Characteristic
APTGF30H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.9
2.0
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGF30H60T3G – Rev 1
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTGF30H60T3G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
100
250µs Pulse Test
< 0.5% Duty cycle
T J=-55°C
Ic, Collector Current (A)
90
TJ=25°C
60
TJ=125°C
30
0
250µs Pulse Test
< 0.5% Duty cycle
TJ =25°C
50
25
TJ =125°C
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
VGE, Gate to Emitter Voltage (V)
75
50
25
TJ=125°C
T J=25°C
0
1
2
3 4
5
6
7
8 9
VGE, Gate to Emitter Voltage (V)
6
Ic=60A
5
4
3
Ic=30A
2
1
Ic=15A
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
VCE=300V
12
VCE=480V
10
8
6
4
2
0
0
20
40
60
80
100
120
Gate Charge (nC)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
14
10
On state Voltage vs Gate to Emitter Volt.
8
VCE=120V
IC = 30A
T J = 25°C
16
On state Voltage vs Junction Temperature
4
3.5
Ic=60A
3
2.5
Ic=30A
2
1.5
Ic=15A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
60
Ic, DC Collector Current (A)
1.20
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
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50
40
30
July, 2006
VCE, Collector to Emitter Voltage (V)
0
T J=-55°C
VCE, Collector to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
4
Gate Charge
18
100
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
75
20
10
0
-50
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
4-6
APTGF30H60T3G – Rev 1
Ic, Collector Current (A)
120
APTGF30H60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
50
40
VGE = 15V
30
Tj = 125°C
V CE = 400V
R G = 6.8Ω
20
10
0
10
20
30
40
50
60
125
100
VGE=15V,
TJ=125°C
V GE=15V,
TJ=25°C
75
50
VCE = 400V
RG = 6.8Ω
25
70
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
V CE = 400V
RG = 6.8Ω
30
40
50
60
70
40
30
20
20
Current Fall Time vs Collector Current
50
tf, Fall Time (ns)
tr, Rise Time (ns)
50
40
10
ICE, Collector to Emitter Current (A)
V GE=15V,
TJ=125°C
30
TJ = 125°C
20
TJ = 25°C
10
10
0
0
V CE = 400V, V GE = 15V, RG = 6.8Ω
0
10
20
30
40
50
60
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
TJ=125°C,
V GE=15V
0.5
0.25
0
0
10
20
30
40
50
60
2
V CE = 400V
V GE = 15V
RG = 6.8Ω
1.5
TJ = 125°C
1
0.5
0
70
0
ICE, Collector to Emitter Current (A)
10
20
30
40
50
60
70
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
1
70
0.75
Eon, 30A
0.5
VCE = 400V
VGE = 15V
TJ= 125°C
0.25
60
50
40
30
20
July, 2006
Eoff, 30A
IC , Collector Current (A)
Switching Energy Losses (mJ)
70
10
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
0
100
200
300
400
500
600
VCE, Collector to Emitter Voltage (V)
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5-6
APTGF30H60T3G – Rev 1
Eon, Turn-On Energy Loss (mJ)
0.75
10
20
30
40
50
60
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
1
V CE = 400V
RG = 6.8Ω
0
70
APTGF30H60T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
280
VCE = 400V
D = 50%
R G = 6.8Ω
240
200
TJ = 125°C
TC= 75°C
160
120
hard
switching
40
0
0
50
ZCS
ZVS
80
VCE, Collector to Emitter Voltage (V)
10
20
30
40
50
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7
0.6
0.5
0.4
0.3
0.9
0.7
0.5
0.3
0.2
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
July, 2006
0.9
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF30H60T3G – Rev 1
Thermal Impedance (°C/W)
1