ETC CMT70N03

CMT70N03
N-CHANNEL Logic Level Power MOSFET
APPLICATION
FEATURES
Buck Converter High Side Switch
Low ON Resistance
Other Applications
Low Gate Charge
Peak Current vs Pulse Width Curve
VDSS
RDS(ON) Typ.
ID
Inductive Switching Curves
30V
6.6mΩ
71A
Improved UIS Ruggedness
PIN CONFIGURATION
SYMBOL
TO-252
D
GATE
DRAIN
SOURCE
Front View
1
2
3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current - Continuous Tc = 25℃, [email protected] (Note 2)
Symbol
Value
Unit
VDSS
30
V
ID
71
A
- Continuous Tc = 100℃, [email protected] (Note 2)
ID
45
- Pulsed Tc = 25℃, [email protected] (Note 3)
IDM
284
Gate-to-Source Voltage - Continue
VGS
±20
V
Total Power Dissipation
PD
66
W
0.53
W/℃
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.0
V/ns
TJ, TSTG
-55 to 150
℃
Single Pulse Avalanche Energy
EAS
TBD
mJ
Maximum Lead Temperature for Soldering Purposes
TL
300
℃
TPKG
260
℃
Operating Junction and Storage Temperature Range
Maximum Package Body for 10 seconds
THERMAL RESISTANCE
Symbol
RθJC
Parameter
Junction-to-case
RθJA
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
RθJA
2004/04/13
Min
Typ
Max
1.9
Units
℃/W
50
℃/W
62
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
Champion Microelectronic Corporation
Page 1
CMT70N03
N-CHANNEL Logic Level Power MOSFET
ORDERING INFORMATION
Part Number
Package
CMT70N03
TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT70N03
Characteristic
Symbol
Min
VDSS
30
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
V
(VGS = 0 V, ID = 250 µA)
Breakdown Voltage Temperature Coefficient,
ΔVDSS/∆TJ
0.05
V/℃
(Reference to 25℃, ID = 1mA)
Drain-to-Source Leakage Current
IDSS
µA
(VDS = 30 V, VGS = 0 V, TJ = 25℃)
1
(VDS = 24 V, VGS = 0 V, TJ = 125℃)
10
Gate-to-Source Forward Leakage
IGSS
100
nA
IGSS
-100
nA
3.0
V
(VGS = 20 V)
Gate-to-Source Reverse Leakage
(VGS = -20 V)
ON Characteristics
VGS(th)
Gate Threshold Voltage,
1.0
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance,
(Note 5)
RDS(on)
(VGS = 10 V, ID = 15A)
mΩ
6.6
(VGS = 4.5 V, ID = 12A)
8.0
12
Forward Transconductance (VDS = 20V, ID = 12A)
(Note 5)
gFS
30
S
(VDS = 15 V, VGS = 0 V,
Ciss
2600
f = 1.0 MHz)
Coss
480
pF
pF
Crss
230
pF
Qg
50
Qg
25
nC
nC
Gate-to-Source Charge
Qgs
7.5
nC
Gate-to-Drain Charge
Qgd
8.5
nC
td(on)
TBD
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
(VDS = 15 V, ID = 12 A) (Note5, 6)
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 15 V, ID = 15 A,
VGS = 10 V, RG = TBDΩ)
(Note 5,6)
tr
TBD
ns
ns
td(off)
TBD
ns
tf
TBD
ns
Source-Drain Diode Characteristics
Continuous Source Current (Body
Diode )
IS
71
A
A
Integral pn-diode in MOSFET(Note 2)
Pulse Source Current (Body Diode)
ISM
284
Forward On-Voltage
(IS = 12 A, VGS = 0 V)
VSD
1.0
Forward Turn-On Time
(IF = 12 A, VGS = 0 V,
trr
30
ns
di/dt = 100A/µs) (Note 5)
Qrr
40
nC
Reverse Recovery Charge
2004/04/13
Champion Microelectronic Corporation
V
Page 2
CMT70N03
N-CHANNEL Logic Level Power MOSFET
Note 1: TJ = +25℃ to 150℃
Note 2: Current is calculated based upon maximum allowable junction temperature.
Package current limitation is 30A.
Note 3: Repetitive rating; pulse width limited by maximum junction temperature.
Note 4: ISD = 12.0A, di/dt <200A/µs, VDD <BVDSS, TJ = +150℃
Note 5: Pulse width < 250µs; duty cycle < 2%
Note 6: Essentially independent of operating temerpature.
PACKAGE DIMENSION
TO-252
C
B
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E
V
R
S
A
4
2
3
U
K
1
L
D
G
2004/04/13
J
H
Champion Microelectronic Corporation
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CMT70N03
N-CHANNEL Logic Level Power MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
2004/04/13
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
Champion Microelectronic Corporation
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