CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS(ON) Typ. ID Inductive Switching Curves 30V 6.6mΩ 71A Improved UIS Ruggedness PIN CONFIGURATION SYMBOL TO-252 D GATE DRAIN SOURCE Front View 1 2 3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V (Note 2) Symbol Value Unit VDSS 30 V ID 71 A － Continuous Tc = 100℃, VGS@10V (Note 2) ID 45 － Pulsed Tc = 25℃, VGS@10V (Note 3) IDM 284 Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation PD 66 W 0.53 W/℃ Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns TJ, TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS TBD mJ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ TPKG 260 ℃ Operating Junction and Storage Temperature Range Maximum Package Body for 10 seconds THERMAL RESISTANCE Symbol RθJC Parameter Junction-to-case RθJA Junction-to-ambient (PCB Mount) Junction-to-ambient RθJA 2004/04/13 Min Typ Max 1.9 Units ℃/W 50 ℃/W 62 ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air Champion Microelectronic Corporation Page 1 CMT70N03 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number Package CMT70N03 TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT70N03 Characteristic Symbol Min VDSS 30 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage V (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient, ΔVDSS/∆TJ 0.05 V/℃ (Reference to 25℃, ID = 1mA) Drain-to-Source Leakage Current IDSS µA (VDS = 30 V, VGS = 0 V, TJ = 25℃) 1 (VDS = 24 V, VGS = 0 V, TJ = 125℃) 10 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 3.0 V (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage, 1.0 (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance, (Note 5) RDS(on) (VGS = 10 V, ID = 15A) mΩ 6.6 (VGS = 4.5 V, ID = 12A) 8.0 12 Forward Transconductance (VDS = 20V, ID = 12A) (Note 5) gFS 30 S (VDS = 15 V, VGS = 0 V, Ciss 2600 f = 1.0 MHz) Coss 480 pF pF Crss 230 pF Qg 50 Qg 25 nC nC Gate-to-Source Charge Qgs 7.5 nC Gate-to-Drain Charge Qgd 8.5 nC td(on) TBD Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) (VDS = 15 V, ID = 12 A) (Note5, 6) Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 15 V, ID = 15 A, VGS = 10 V, RG = TBDΩ) (Note 5,6) tr TBD ns ns td(off) TBD ns tf TBD ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode ) IS 71 A A Integral pn-diode in MOSFET(Note 2) Pulse Source Current (Body Diode) ISM 284 Forward On-Voltage (IS = 12 A, VGS = 0 V) VSD 1.0 Forward Turn-On Time (IF = 12 A, VGS = 0 V, trr 30 ns di/dt = 100A/µs) (Note 5) Qrr 40 nC Reverse Recovery Charge 2004/04/13 Champion Microelectronic Corporation V Page 2 CMT70N03 N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25℃ to 150℃ Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt <200A/µs, VDD <BVDSS, TJ = +150℃ Note 5: Pulse width < 250µs; duty cycle < 2% Note 6: Essentially independent of operating temerpature. PACKAGE DIMENSION TO-252 C B PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E V R S A 4 2 3 U K 1 L D G 2004/04/13 J H Champion Microelectronic Corporation Page 3 CMT70N03 N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2004/04/13 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 4