CTT60 Thyristor-Thyristor Modules Dimensions in mm (1mm=0.0394") Type CTT60GK08 CTT60GK12 CTT60GK14 CTT60GK16 CTT60GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 100 60 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1500 1600 1350 1450 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11200 10750 9100 8830 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us repetitive, IT=150A 150 non repetitive, IT=ITAVM 500 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAV 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=300us t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. 90 g DEECorp. CTT60 Thyristor-Thyristor Modules Symbol Test Conditions Characteristic Values Unit 5 mA IT, IF=200A; TVJ=25 C 1.57 V For power-loss calculations only (TVJ=125oC) 0.85 V IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO o 3.7 rT VGT IGT VGD o m VD=6V; TVJ=25 C TVJ=-40oC 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oC 100 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 10 mA IGD o IL TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mA IH TVJ=25oC; VD=6V; RGK= 200 mA 2 us 150 us 100 uC 24 A o tgd TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us tq TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM QS TVJ=TVJM; IT, IF=50A; -di/dt=3A/us typ. IRM RthJC per thyristor/diode; DC current per module 0.45 0.225 K/W RthJK per thyristor/diode; DC current per module 0.65 0.325 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Gate-cathode twin pins for version 1 * DC motor control * Softstart AC motor controller * Light, heat and temperature control * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits DEECorp. CTT60 Thyristor-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 10 1: IGT, TVJ = 125oC V 2: IGT, TVJ = 25oC 3: IGT, TVJ = -40oC VG 3 2 1 5 6 1 4 4: PGAV = 0.5 W 5: PGM = o IGD, TVJ = 125 C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 4 Gate trigger characteristics Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) 1000 TVJ = 25oC s tgd typ. 100 Limit 10 3 x CTT60 1 10 mA 100 1000 IG Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time DEECorp. CTT60 Thyristor-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x CTT60 CTT60 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d RthJC (K/W) DC 180oC 120oC 60oC 30oC 0.45 0.47 0.49 0.505 0.52 Constants for ZthJC calculation: i 1 2 3 CTT60 Rthi (K/W) ti (s) 0.014 0.026 0.41 0.015 0.0095 0.175 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.65 0.67 0.69 0.705 0.72 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.014 0.026 0.41 0.2 0.015 0.0095 0.175 0.67 DEECorp.