MICROSEMI 1N6627

1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
“E” Package
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DESCRIPTION
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
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APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF19500/590
Further options for screening in accordance with MILPRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6626, MSP6629, etc.
Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
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MicroNote 050
MAXIMUM RATINGS
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MECHANICAL AND PACKAGING
o
Junction Temperature: -65 C to +175 C
Storage Temperature: -65oC to +175oC
Peak Forward Surge Current @ 25oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
Average Rectified Forward Current (IO) at TL= +75oC
(L=.375 inch from body):
1N6626 thru 1N6628
4.0A
1N6629 thru 1N6630
3.0A
1N6631
2.5A
(Derate linearly at 1.0%/oC for TL> +75oC)
Average Rectified Forward Current (IO) at TA=25oC:
1N6626 thru 1N6628
2.0A
1N6629 thru 1N6631
1.4A
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating
is typical for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where
TJ(max) is not exceeded.)
Thermal Resistance L= 0.375 inch (RθJL): 22oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260oC for 10 s (maximum)
Copyright  2004
11-01-2004 REV A
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CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper except for JANS with solid
Silver (Ag) and no finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6626
6626 thru 1N6631
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Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
VR
IR = 50 µA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MAXIMUM
REVERSE
CURRENT IR @
VRWM
TA=25oC
TA=150oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
V
V@A
V@A
V
ns
ns
µA
µA
1N6626
220
1.35V @ 1.2A 1.50V @ 4.0A
200
2.0
500
30
45
1N6627
440
1.35V @ 1.2A 1.50V @ 4.0A
400
2.0
500
30
45
1N6628
660
1.35V @ 1.2A 1.50V @ 4.0A
600
2.0
500
30
45
1N6629
880
1.40V @ 1.0A 1.70V @ 3.0A
800
2.0
500
50
60
1N6630
990
1.40V @ 1.0A 1.70V @ 3.0A
900
2.0
500
50
60
1N6631
1100
1.60V @ 1.0A 1.95V @ 2.0A
1000
4.0
600
60
80
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/µs MIL-STD-750, Method 4031,
Condition D.
Symbol
VBR
VRWM
VF
IR
C
trr
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2 A,
100 A/µs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5 A
tr = 12 ns
A
3.5
3.5
3.5
4.2
4.2
5.0
V
8
8
8
12
12
20
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ELECTRICAL CHARACTERISTICS @ 25oC
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
Copyright  2004
11-01-2004 REV A
1N6626 thru 1N6631
FIGURE 1
Typical Forward Current
vs
Forward Voltage
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6626 thru 1N6631
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW . Microsemi .C OM
FIGURE 3
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 5
Forward Pulse Current vs.
Pulse Duration
Copyright  2004
11-01-2004 REV A
FIGURE 6
Reverse Pulse Power vs.
Pulse Duration
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
1N6626
6626 thru 1N6631
10ms
1N6626 thru 1N6631
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW . Microsemi .C OM
PACKAGE DIMENSIONS
NOTE: Lead tolerances +0.002/-0.003 inches
1N6626 thru 1N6631
Copyright  2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4