FT08...D SURFACE MOUNT TRIAC DPAK (Plastic) On-State Current Gate Trigger Current 8 Amp < 5 mA to < 50 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 This series of TRIACs uses a high performance PNPN technology. MT2 These devices are intended for AC control applications using surface mount technology. G The high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives... Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Min. IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current All Conduction Angle, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz Tj = 125 ºC 8 84 80 36 Tj Tstg TL Operating Temperature Range Storage Temperature Range Lead Temperature for soldering SYMBOL VDRM VRRM Repetitive Peak Off State Voltage 4 10 1 50 -40 -40 10s max. PARAMETER Max. +125 +150 260 VOLTAGE B 200 D 400 Unit A A A A 2s A W W A/µs ºC ºC ºC Unit M 600 V Jun - 02 FT08...D SURFACE MOUNT TRIAC Electrical Characteristics SYMBOL IGT (1) PARAMETER Quadrant CONDITIONS Gate Trigger Current Q1÷Q3 VD = 12 VDC , RL = 30Ω Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC IDRM /IRRM Off-State Leakage Current VR = VRRM , Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL Tj = 125 ºC Tj = 125 ºC IT = 11 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 IT = 100 mA , Gate open, Tj = 25 ºC Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Q1,Q3 Q2 IG = 1.2 IGT, Tj = 25 ºC dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open SENSITIVITY 07 08 MAX 5 10 7 MAX MAX MAX MAX MAX MAX MIN MAX 10 15 MAX 10 20 MAX 15 30 MIN 20 100 Unit 11 14 16 25 35 50 mA mA mA 1 5 µA 0.85 V 60 mΩ 1.55 V 1.3 V 0.2 V 25 35 50 mA 25 50 80 mA 50 60 80 200 400 250 V/µs Tj = 125 ºC (dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs (dv/dt)c= 10 V/µs without snubber Rth(j-c) Rth(j-a) MIN 3.5 5.4 9 9 9 A/ms MIN 1.8 2.8 4.5 4.5 4.5 MIN - 4.5 4.5 - Tj = 125 ºC Tj = 125 ºC Tj = 125 ºC Thermal Resistance Junction-Case 1.6 ºC/W Thermal Resistance Junction-Ambient 70 ºC/W (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 08 08 B D 00 TR FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Jun - 02 FT08...D SURFACE MOUNT TRIAC Fig. 1a: Maximum power dissipation versus RMS on-state current (FT0807.D, FT0808.D). Fig. 1b: Maximum power dissipation versus RMS on-state current (FT0811.D, FT0814.D). P (W) P (W) 10 10 α = 180 º 8 α = 180 º 8 α = 120 º α = 90 º 6 α = 30 º α 2 180 º α α IT(RMS)(A) 0 0 1 α = 60 º 4 α = 30 º 2 α = 90 º 6 α = 60 º 4 α = 120 º 2 3 4 5 6 7 0 1 3 2 4 5 6 7 8 Fig. 3: RMS on-state current versus ambient temperature T case (ºC) P (W) IT(RMS)(A) 0 8 Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. 180 º α I T(RMS) (A) 9 10 Rth=10 ºC/W Rth=5 ºC/W 8 -110 Rth=0 ºC/W Rth(j-a) = Rth(j-c) 8 7 6 -115 6 α = 180 º 5 Rth=15 ºC/W 4 4 -120 3 Rth(j-a) = 55 ºC/W S(Cu) = 1.75 cm2 2 2 1 α = 180 º -125 Tamb (ºC) 0 0 25 50 75 100 Tamb (ºC) 0 125 0 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 25 50 75 100 125 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). K = [Zth(j-c) / Rth (j-c)] IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 1.0 2.5 2.0 0.5 IGT 1.5 1.0 IH 0.2 0.5 0.1 1E-3 tp (s) 1E-2 1E-1 1E+0 Tj (ºC) 0.0 -40 -20 0 20 40 60 80 100 120 140 Jun - 02 FT08...D SURFACE MOUNT TRIAC Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) I TSM (A) 500 80 Tj initial = 25 ºC Tj initial = 25 ºC F = 50 Hz 70 ITSM 60 50 100 40 I2 t 30 20 10 Number of cycles 0 1 10 100 tp(ms) 10 1000 2 1 Fig. 8: On-state characteristics (maximum values). 5 10 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). Rth(j-a) (ºC/W) ITM(A) 100 100.0 80 10.0 Tj max Vto = 0.8 V Rd = 60 mΩ Tj = Tj max. 60 40 Tj = 25 ºC 1.0 20 VTM(V) 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(Cu) (cm2) 0 0 2 4 6 8 10 12 14 16 18 20 Jun - 02 FT08...D SURFACE MOUNT TRIAC PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 8º±2º A ø1x0.15 E1 c2 E L3 8º±2º 8º±2º D1 D H 1.6 8º±2º L4 8º±2º L e b L2 A1 4.57 Typ. 1.067±0.013 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g FOOT PRINT 6.7 6.7 3 3 1.6 1.6 2.3 2.3 Jun - 02