HC8050 Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………40V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………………25V V EB O ——Emitter-Base Voltage………………………………6V I C ——Collector Current………………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO IEBO HFE Collector Cut-off Current VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO fT Base- Emitter Voltage Min Emitter Cut-off Current 85 40 DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage 40 25 6 100 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Typ Max Unit Test Conditions 0.1 0.1 500 μA μA 1 0.5 1.2 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 VCE=10V, IC=50mA █ hFE Classification B 85—160 C D E 120—200 160—300 270—500 Shantou Huashan Electronic Devices Co.,Ltd. HC8050