MICROSEMI 1N4108

500mW Low Noise Zener Diodes
1N4614 – 1N4627/1N4099 – 1N4135
500mW Low Noise Zener Diodes
Features
• Low Current Operation at 250µA
• Low Reverse Leakage
•
•
•
•
Low Noise Characteristics
Metallurgically Bonded
High temperature soldering guaranteed: 260˚C/10 seconds
RoHS Compliant
DO-35
Mechanical Data
Case:
Terminals:
Hermetically sealed axial lead glass case, DO-35 package
Leads, tin-lead plated solderable per MIL-STD-750, method 2026
Polarity:
Color band denotes cathode
Weight:
0.2 gram
Maximum Ratings (T A=25ºC unless noted otherwise)
Symbol
Value
Unit
Conditions
Power dissipation
500
mW
TL≤50 °C, 3/8 inch (10mm) lead
length from the body. (See Fig.2)
RthJL
Max. Thermal Resistance
(Junction to Lead)
250
°C / W
At 3/8 inch (10mm) lead length
from body
TJ,TSTG
Operating Junction and Storage
Temperature Range
-65 to 175
°C
Ptot
Description
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/DX 2007-05-15
Page 1 of 5
500mW Low Noise Zener Diodes
1N4614 – 1N4627/1N4099 – 1N4135
Electrical Characteristics (T A=25ºC unless noted otherwise)
Part Number
Nominal
Zener
Voltage VZ
@ IZT
Zener
Test
Current
IZT
(Note1)
V
1N4614
1N4615
1N4616
1N4617
1N4618
1N4619
1N4620
1N4621
1N4622
1N4623
1N4624
1N4625
1N4626
1N4627
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
Maximum
Zener
Impedance
ZZT
Ω
1200
1250
1300
1400
1500
1600
1650
1700
1650
1600
1550
1500
1400
1200
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
Maximum Reverse
Leakage Current
IR @ VR
μA
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
10
10
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
Maximum
Noise Density
ND @ IZT
(Fig.1)
V
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.45
21.28
μV/Sq(HZ)
1
1
1
1
1
1
1
1
1
1
1
2
4
5
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
Maximum
Zener
Current
IZM (Note2)
Maximum
TEMP. Coeff. Of
Zener Voltage
αvz
mA
%/° C
-0.075
-0.075
-0.075
-0.075
-0.075
-0.075
-0.075
-0.065
-0.060
-0.050
-0.050+0.020
-0.045+0.030
-0.020+0.040
-0.010+0.050
0.060
0.065
0.070
0.075
0.080
0.080
0.080
0.080
0.080
0.085
0.085
0.085
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.090
0.095
120
110
100
95
90
87
85
83
80
77
75
70
65
61
56
51
46
44
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
14
Rev. A/DX 2007-05-15
www.taitroncomponents.com
Page 2 of 5
500mW Low Noise Zener Diodes
1N4614 – 1N4627/1N4099 – 1N4135
Nominal
Zener
Voltage VZ
Part Number
@ IZT
Zener
Test
Current
IZT
(Note1)
Maximum
Zener
Impedance
ZZT
Maximum Reverse
Leakage Current
IR @ VR
Maximum
Noise Density
ND @ IZT
(Fig.1)
Maximum
Zener
Current
IZM
(Note2)
Maximum
TEMP. Coeff. Of
Zener Voltage
αvz
V
μA
Ω
μA
V
μV/Sq(HZ)
mA
%/° C
1N4120
30
250
200
0.01
22.80
13
0.095
1N4121
33
250
200
0.01
25.08
40
40
12
0.095
1N4122
36
250
200
0.01
27.38
40
11
0.095
1N4123
39
250
200
0.01
29.65
40
9.8
0.095
1N4124
43
250
250
0.01
32.65
40
8.9
0.095
1N4125
47
250
250
0.01
35.75
40
8.1
0.095
1N4126
51
250
300
0.01
38.76
40
7.5
0.100
1N4127
56
250
300
0.01
42.60
40
6.7
0.100
1N4128
60
250
400
0.01
45.60
40
6.4
0.100
1N4129
62
250
500
0.01
47.10
40
6.1
0.100
1N4130
68
250
700
0.01
51.68
40
5.6
0.100
1N4131
75
250
700
0.01
57.00
40
5.1
0.100
1N4132
82
250
800
0.01
62.32
40
4.6
0.100
1N4133
87
250
1000
0.01
66.12
40
4.4
0.100
1N4134
91
250
1200
0.01
69.16
40
4.2
0.100
1N4135
100
250
1500
0.01
76.00
40
3.8
0.100
Note 1: The part numbers shown above have a Zener voltage tolerance of ±5% of the
nominal Zener voltage. VZ is measured with the device junction in thermal equilibrium
at an ambient temperature of 25° C ± 3° C.
Note 2: Based upon 400mW maximum power dissipation at 25° C lead temperature, allowance
has been made for the higher voltage associated with operation at higher currents.
Rev. A/DX 2007-05-15
www.taitroncomponents.com
Page 3 of 5
500mW Low Noise Zener Diodes
1N4614 – 1N4627/1N4099 – 1N4135
Circuit and Graphs
Fig.1-Nosie Density Measurement Circuit
Ptot, Rated Power Dissipation (mW)
Fig.2- Power Derating Curve
TL, Lead Temperature (° C)
Fig.4- Typical Capacitance vs. Zener Voltage
Typical Capacitance (pF)
RthJL, Junction to Lead Thermal
Resistance (°C / W)
Fig.3-Typical Thermal Resistance
L, Lead Length to Heat Sink (inch)
Zener Voltage (V)
Rev. A/DX 2007-05-15
www.taitroncomponents.com
Page 4 of 5
500mW Low Noise Zener Diodes
1N4614 – 1N4627/1N4099 – 1N4135
Dimensions in inch (mm)
How to contact us
DO-35
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
CROSS REGION PLAZA, 899 LINGLING ROAD, SUITE 18C, SHANGHAI, 200030, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/DX 2007-05-15
www.taitroncomponents.com
Page 5 of 5