N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 SYMBOL VALUE UNIT ID IDM 1.0 5.0 A VGS VGSM +/-30 +/-40 V V PD W 50 TJ, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy – Tj = 25℃ (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω) EAS 20 mJ Thermal Resistance – Junction to Case - Junction to Ambient θJC θJA 1.0 62.5 ℃/W TL 260 ℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET M01N60 1.0A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Drain-Source Breakdown Voltage SYMBO MIN L V(BR)DSS 600 Drain-Source Leakage Current IDSS Gate-Source Leakage CurrentForward Gate Threshhold Voltage IGSSF VGS(th) Drain-Source On-Resistance RDS(on) TYP MAX UNIT Vdc VGS=0, ID=250uA mA mA nA VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125℃ 4.0 V VDS=VGS, ID=250uA 8 Ohm VGS=10V, ID=0.6A* 1.0 0.25 100 2.0 CONDITION VGSR=20V, VDS=0 Input Capacitance Ciss 210 pF Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Coss Crss ton toff 28 9 8 18 pF pF nS nS VDS=25V, VGS=0, f=1 MHz Rise Time tr 21 nS VGS=10V, RG=18Ω Fall Time tf 24 nS Total Gate Charge Qg 8.5 nC Gate-Drain Charge Gate-Drain Charge Qgd Qgs 8.5 1.8 nC nC VDS=400V, ID=1.0A Intemal Drain Inductance LD 4.5 nH Internal Drain Inductance Ls 7.5 nH Measured from the drain lead 0.25’’ From package to center of die Measured from the sorce lead 0.25’’ package to source bond pad VDS=300V, ID=1.0A, VGS=10V* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Tum Time Reverse Recovery Time VDS ton trr 1.5 ** 350 500 V nS nS *Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2% **Negligible, Dominated by circuit inductance STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Is=1.0A, VGS=0V dIS/dt = 100A/μS Page 2 N Channel MOSFET 1.0A M01N60 N Channel MOSFET M01N60 1.0A Page 3 Page 4