一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER GENERAL DESCRIPTION 功能敘述 The M7615 is a low power PIR ( passive infra-red ) controller with hi level output , paired with M3766 for battery power door bell/ relay /alarm application. With special noise immunity technique , M7615 is the most stable PIR controller you can find on the market. More than this , there are few components needed in its application circuit which can reduce material cost and increase competitive. FEATURES 產品特長 • High noise immunity. • Low stand-by current < 90uA • Drive either Relay. • Adjustable play on duration and latch duration. • On-chip voltage regulator. • 20 second warm-up. • CDS input conditionally. • 14 pin DIP or SOP package. APPLICATIONS 產品應用 • PIR light controller , Motion Detector , Alarm system , Auto-door bell. PIN ASSIGNMENT M7615-P14 VDD 1 14 RELAY UOU1 II1 NII1 TE VSS II2 CDS UOU2 RTX 1/7 7 8 RT1 2005-08-01 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER PIN DESCRIPTION Pin Name I/O Description Pin No. Operation voltage：5V，Stand by current：80~90uA 1 TE = 1MΩ 4 System ground. 5 I Connect to a CDS for inhibit , when Vinhi = 0 disable ,Vinhi = 1 enable trigger 6 I Delay timer oscillator input The delay time of receiving PIR signal to trigger Encoder or a high signal to trigger relay. The range for：RTX=2 KΩ ~ 5 MΩ CTX=100P~0.01UF FOR 100P or 0.01uf delay time=45000 R*C FOR 1000P delay time=35000 R*C Delay Time：20 ms ~ 2250s Ex：CTX=100p，RTX=680KΩ，Delay Time=3.1s CTX=1000p，RTX=100KΩ，Delay Time=3.5s CTX=0.01uf，RTX=10KΩ，Delay Time=4.5s 7 RTI I Latch timer oscillator input The latch time of the range for：RTI=100 KΩ ~ 1 MΩ CTI=0.1UF(fix) Contain Time=35 R*C Contain time：> 0.5s ~ Ex：CTI=0.1uf，RTI=1MΩ，Contain Time=3.5s 8 UOU2 O 2 nd stage OP amp output. 9 VDD TE I VSS CDS RTX II2 NII1 I I nd 10 st 11 st 2 stage OP amp negative input. 1 stage OP amp positive input. II1 I 1 stage OP amp negative input. 12 RELAY O To drive relay，active high. 13 UOU1 I 1st stage OP amp output. 14 Delay timing and Latch timing oscillator input pin, connect to external RC to obtain desired delay duration. Variable delay(latch) duration can be obtained by selecting various values of RC or using a variable resistor. 2/7 2005-08-01 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER RD CD Fig.1 Timing Oscillator The PIR signal amplifier needs a warm up period after power-on, so during this time the input should be disabled OP1O OP1 OP1P OP1N VCP OP2O OP2N comparator OP2 OP2P VCN Fig.2 PIR Amplifier Block Diagram TIMING RELATIONSHIP： 0.7 VDD 0.5 VDD Signal on UOU2 Pin 0.3 VDD Window detector Pulse width detector RELAY T T1：Delay Time T2 T1 T2：Latch ( Contain )Time T：Warm Up Time (≦20s ) BLOCK DIAGRAM 3/7 2005-08-01 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER M7615 VDD TE RTI LATCH TIMMER OSC VDD RELAY CONTROL RTX LOGIC DELAY TIMMER OSC VDD CDS CDS VDD 0.3VDD + WINDOW DETECTOR REF. PULSE WIDTH DETECTOR VOLTAGE 0.7VDD + 0.5VDD NII1 + PIR + - II1 UOU1 NII2 II2 UOU2 ABSOLUTE MAXIMUM RATING Parameter (TA=25℃) Sym. 4/7 Rating Unit 2005-08-01 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER Power Supply VDD With Respect to VSS Voltage On Any Pin Operating Temperature Storage Temperature VDD - VSS 5.6 -0.3 to 5.6 -20 to 70 -65 to 150 Top V V ℃ ℃ ELECTRICAL CHARACTERISTICS Characteristics Supply Voltage Stand by Current Operating Current Stable Voltage Source Current of VREF Ripple of VREF Input and Output Regulation of VREF Time Delay Frequency Time Latch Frequency CDS Operating Trigger CDS Operating Trigger CDS Source Current CDS Output Source Current Sym. VDD IST IDD VREF IREF FRTX FRTI VT + V TICDS ISOURCE CDS Output Sink Current ISINK Relay Source Current Relay Sink Current Relay Operating Voltage IRS IRSINK VRO Min. 4.2 — 1.8 2.1 200 — — 15 15 1.3 0.6 2.6 9 Typ. 5 — — 2.5 — — — 16 16 1.7 0.9 3.5 10.4 Max. 5.5 100 2.5 2.75 — 0.5 0.3% 17 17 2.1 1.1 4.4 17.4 KHz Hz V V uA mA 11.6 — — 13.1 13 — — — 21 mA 10 10 18.8 mA mA V 5/7 Unit V uA mA V uA mV Conditions VDD > 4.2V For Delay 3s For Contain 3s 2005-08-01 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER APPLICATION DIAGRAM 參考電路圖 (A) M7615P VDD RELAY 1 14 C1 UOU1 R R1 II1 VDD R6 NII1 TE C4 PIR R4 R5 II2 VSS C1 C2 C3 C4 C5 R 0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1MΩ RTX R1 R2 R3 R4 R5 R6 C3 C2 CDS CDS C5 R3 R2 UOU2 7 8 RTI 820KΩ 820KΩ 15KΩ 15KΩ 680KΩ 47 KΩ VDD1 1K VDD 10μ/ 5.1V 2.2K 50V VDD M3766 Z 1 Rz 16 VDD1 LO K6 X K5 Y Rosc 772 K4 BB K3 772 BUZZER 600Ω 945 945 BZ K2 100Ω 882 K1 VSS 100Ω 882 POR 8 9 *ALARM：M3766 6/7 2005-08-01 12V 一華半導體股份有限公司 PIR CONTROLLER MOSDESIGN SEMICONDUCTOR CORP. M7615 DC PIR CONTROLLER (B) VDD 4002 M7615P VDD R6 945 RELAY 1 LOAD 14 C1 UOU1 R II1 R1 VDD R7 NII1 TE R4 R5 C4 PIR II2 VSS UOU2 RTX C1 C2 C3 C4 C5 R C5 R3 C3 C2 CDS CDS R2 7 0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1MΩ RTI 8 R1 R2 R3 R4 R5 R6 R7 820KΩ 820KΩ 15KΩ 15KΩ 680KΩ 22 KΩ 47 KΩ * All specs and applications shown above subject to change without prior notice. (以上電路及規格僅供參考,本公司得逕行修正) 7/7 2005-08-01