P75N02LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current SYMBOL LIMITS UNITS VGS ±20 V 75 ID TC = 100 °C 50 Pulsed Drain Current 1 IDM 170 Avalanche Current IAR 60 Avalanche Energy L = 0.1mH EAS 140 Repetitive Avalanche Energy 2 L = 0.05mH EAR 5.6 TC = 25 °C Power Dissipation A mJ 60 PD TC = 100 °C W 32.75 Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.3 Junction-to-Ambient RθJA 62.5 Case-to-Heatsink RθCS UNITS °C / W 0.6 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TJ = 125 °C 250 Gate Threshold Voltage 1 V 1.5 3 nA µA Sep-09-2004 P75N02LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current 1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) VDS = 10V, VGS = 10V RDS(ON) gfs TO-220 Lead-Free 70 A VGS = 10V, ID = 30A 5 7 VGS = 7V, ID = 24A 6 8 VDS = 15V, ID = 30A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 800 Qg 140 2 Total Gate Charge 2 5000 VGS = 0V, VDS = 15V, f = 1MHz Gate-Source Charge Qgs VDS = 0.5V (BR)DSS, VGS = 10V, 40 Gate-Drain Charge2 Qgd ID = 35A 75 2 Turn-On Delay Time td(on) tr VDS = 15V, RL = 1Ω 7 Turn-Off Delay Time2 td(off) ID ≅ 30A, VGS = 10V, RGS = 2.5Ω 24 Fall Time2 nC 7 2 Rise Time pF 1800 tf nS 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 75 Pulsed Current 3 ISM 170 Forward Voltage1 VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = IS, VGS = 0V 1.3 trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr A V 37 nS 200 A 0.043 µC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P75N02LTG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name 2 Sep-09-2004 P75N02LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead-Free TO-220 (3-Lead) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. A 9.78 10.16 10.54 B 2.61 2.74 2.87 C 20 Min. Typ. Max. H 2.4 2.54 2.68 I 1.19 1.27 1.35 J 4.4 4.6 4.8 D 28.5 28.9 29.3 K 1.14 1.27 1.4 E 14.6 15.0 15.4 L 2.3 2.6 2.9 F 8.4 8.8 9.2 M 0.26 0.46 0.66 G 0.72 0.8 0.88 N 7° J K F C E B A 2 3 D 1 I H L M G 3 Sep-09-2004