ETC PA102FM

P-Channel Logic Level Enhancement
NIKO-SEM
PA102FM
Mode Field Effect Transistor (Preliminary)
SOT-23
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
-20
118mΩ
-3A
1 :GATE
2 :DRAIN
3 :SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
TC = 25 °C
Continuous Drain Current
-3
ID
TC = 70 °C
Pulsed Drain Current
-1.4
1
IDM
TC = 25 °C
Power Dissipation
A
-10
1.25
PD
TC = 70 °C
W
0.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
TYPICAL
MAXIMUM
UNITS
166
°C / W
RθJA
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = -250µA
VGS(th)
VDS = VGS, ID = -250µA
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±12V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
-1
VDS = -16V, VGS = 0V, TJ = 125 °C
-10
Gate Threshold Voltage
On-State Drain Current 1
Drain-Source On-State Resistance1
ID(ON)
RDS(ON)
VDS = -5V, VGS = -4.5V
-20
V
-0.45 -0.8
-1.2
-6
nA
µA
A
VGS = -2.5V, ID =-1A
150
215
VGS = -4.5V, ID = -2A
98
118
VGS = -10V, ID = -2A
72
85
mΩ
Nov-02-2004
1
P-Channel Logic Level Enhancement
NIKO-SEM
PA102FM
Mode Field Effect Transistor (Preliminary)
Forward Transconductance1
gfs
VDS = -5V, ID = -2A
SOT-23
16
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
95
Total Gate Charge2
Qg
7.6
2
430
VGS = 0V, VDS = -6V, f = 1MHz
Gate-Source Charge
Qgs
VDS = 0.5V (BR)DSS, VGS = -4.5V,
3.2
Gate-Drain Charge2
Qgd
ID = -2A
2
Turn-On Delay Time2
td(on)
2
tr
td(off)
Rise Time
2
Turn-Off Delay Time
Fall Time2
pF
235
10
nC
11
22
VDD = -10V
32
55
ID ≅ -1A, VGS = -4.5V, RG = 6Ω
38
68
32
55
tf
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
-1.6
Pulsed Current 3
ISM
-3
Forward Voltage1
VSD
IF = -1A, VGS = 0V
-1.2
A
V
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THE PRODUCT MARKED WITH “21YWW”, DATE CODE or LOT #
Nov-02-2004
2
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
PA102FM
SOT-23
Nov-02-2004
3
P-Channel Logic Level Enhancement
NIKO-SEM
Mode Field Effect Transistor (Preliminary)
PA102FM
SOT-23
Body Diode Forward Voltage Variation with Source Current and Temperature
-Is - Reverse Drain Current(A)
10
V GS = 0V
T A = 125° C
1
0.1
25° C
0.01
-55° C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
-VSD - Body Diode Forward Voltage(V)
1.2
Nov-02-2004
4
P-Channel Logic Level Enhancement
NIKO-SEM
PA102FM
Mode Field Effect Transistor (Preliminary)
SOT-23
SOT-23 (M3) MECHANICAL DATA
mm
mm
Dimension
Dimension
Min.
Typ.
Max.
Min.
Typ.
Max.
0.15
0.25
A
0.85
1.15
H
0.1
B
2.4
3
I
0.37
C
1.4
1.6
1.8
J
D
2.7
2.9
3.1
K
E
1
1.1
1.3
L
F
0
0.1
M
G
0.35
0.5
N
H
2
C
1
3
B
A
I
D
E
G
F
Nov-02-2004
5